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features ? single 2.7v - 3.6v supply ? serial peripheral inte rface (spi) compatible ? supports spi modes 0 and 3 ? supports rapids ? operation ? supports dual-input prog ram and dual-output read ? very high operating frequencies ? 100 mhz for rapids ? 85 mhz for spi ? clock-to-output (t v ) of 5 ns maximum ? flexible, optimized erase architecture for code + data storage applications ? uniform 4-kbyte block erase ? uniform 32-kbyte block erase ? uniform 64-kbyte block erase ? full chip erase ? individual sector protection with global protect/unprotect feature ? 128 sectors of 64-kbytes each ? hardware controlled locking of protected sectors via wp pin ? sector lockdown ? make any combination of 64-kbyte sectors permanently read-only ? 128-byte programmable otp security register ? flexible programming ? byte/page program (1 to 256 bytes) ? fast program and erase times ? 1.0 ms typical page program (256 bytes) time ? 50 ms typical 4-kbyte block erase time ? 250 ms typical 32-kbyte block erase time ? 400 ms typical 64-kbyte block erase time ? program and erase suspend/resume ? automatic checking and reporting of erase/program failures ? software controlled reset ? jedec standard manufacturer an d device id read methodology ? low power dissipation ? 5 ma active read current (typical at 20 mhz) ? 5 a deep power-down current (typical) ? endurance: 100,000 program/erase cycles ? data retention: 20 years ? complies with full industrial temperature range ? industry standard green (pb/halide -free/rohs compliant) package options ? 16-lead soic (300-mil wide) ? 8-contact very thin dfn (6 x 8 mm) 1. description the AT25DF641 is a serial interface flash memory device designed for use in a wide variety of high-volume consumer based applications in which program code is shad- owed from flash memory into embedded or ex ternal ram for execution. the flexible erase architecture of the AT25DF641, with its erase granularity as small as 4-kbytes, makes it ideal for data storage as well, eliminating the need for additional data storage eeprom devices. 64-megabit 2.7-volt minimum spi serial flash memory AT25DF641 preliminary see applicable errata in section 18. 3680e?dflash?12/08
2 3680e?dflash?12/08 AT25DF641 [preliminary] the physical sectoring and the erase block sizes of the AT25DF641 have been optimized to meet the needs of today's code and data storage applications. by optimizing the size of the physical sectors and erase blocks, the memory space can be used much more efficiently. because certain code modules and data storage segments must reside by themselves in their own protected sectors, the wasted and unused memory space that occurs with large sectored and large block erase flash memory devices can be greatly reduced. this increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density. the AT25DF641 also offers a sophisticated method for protecting individual sectors against erroneous or malicious pr ogram and erase operati ons. by providing the ab ility to individually pro- tect and unprotect sectors, a system can unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory array securely protected. this is useful in applica- tions where program code is patched or updated on a subroutine or module basis, or in applications where data storage segments need to be modified without running the risk of errant modifications to the program code segments. in addition to indivi dual sector protection capabili- ties, the AT25DF641 incorporates global protec t and global unprotect features that allow the entire memory array to be either protected or unprotected all at once. this reduces overhead during the manufacturing process since sectors do not have to be unprotected one-by-one prior to initial programming. to take code and data protection to the next level, the AT25DF641 incorporates a sector lock- down mechanism that allows any combination of individual 64-kbyte sectors to be locked down and become permanently read-only. this addresses the need of certain secure applications that require portions of the flash memory array to be permanently protected against malicious attempts at altering program code, data modules, security information, or encryption/decryption algorithms, keys, and routines. the device also contains a specialized otp (one-time pro- grammable) security register that can be used for purposes such as unique device serialization, system-level electronic serial number (esn) storage, locked key storage, etc. specifically designed for use in 3-volt system s, the AT25DF641 supports read, program, and erase operations with a supply voltage range of 2.7v to 3.6v. no separate voltage is required for programming and erasing.
3 3680e?dflash?12/08 AT25DF641 [preliminary] 2. pin descriptions and pinouts table 2-1. pin descriptions symbol name and function asserted state type cs chip select: asserting the cs pin selects the device. when the cs pin is deasserted, the device will be deselected and normally be placed in standby mode (not deep power- down mode), and the so pin will be in a high-impedance state. when the device is deselected, data will not be accepted on the si pin. a high-to-low transition on the cs pin is required to start an operation, and a low-to-high transition is required to end an operation. when ending an internally self-timed operation such as a program or erase cycle, the device will not enter the st andby mode until the completion of the operation. low input sck serial clock: this pin is used to provide a clock to the device and is used to control the flow of data to and from the device. command, address, and input data present on the si pin is always latched in on the rising edge of sck, while output data on the so pin is always clocked out on the falling edge of sck. - input si (sio) serial input (serial input/output): the si pin is used to shift data into the device. the si pin is used for all data input including command and address sequences. data on the si pin is always latched in on the rising edge of sck. with the dual-output read array command, the si pin becomes an output pin (sio) to allow two bits of data (on the so and sio pins) to be clocked out on every falling edge of sck. to maintain consistency with spi nomenclature, th e sio pin will be referenced as si throughout the document with exception to sections dealin g with the dual-output read array command in which it will be referenced as sio. data present on the si pin will be ignore d whenever the device is deselected (cs is deasserted). - input/output so (soi) serial output (serial output/input): the so pin is used to shift data out from the device. data on the so pin is always clocked out on the falling edge of sck. with the dual-input byte/page program comma nd, the so pin becomes an input pin (soi) to allow two bits of data (on the soi and si pins) to be clocked in on every rising edge of sck. to maintain consistency with spi nomenclature, the soi pin will be referenced as so throughout the document with exception to se ctions dealing with the dual-input byte/page program command in which it will be referenced as soi. the so pin will be in a high-impedance state whenever the device is deselected (cs is deasserted). - output/input wp write protect: the wp pin controls the hardware locking feature of the device. please refer to ?protection commands and features? on page 21 for more details on protection features and the wp pin. the wp pin is internally pulled-high and may be left floating if hardware controlled protection will not be used. however, it is recommended that the wp pin also be externally connected to v cc whenever possible. low input
4 3680e?dflash?12/08 AT25DF641 [preliminary] hold hold: the hold pin is used to temporarily pause serial communication without deselecting or resetting the device. while the hold pin is asserted, transitions on the sck pin and data on the si pin will be ignored, and the so pin will be in a high-impedance state. the cs pin must be asserted, and the sck pin must be in the low state in order for a hold condition to start. a hold condition pauses serial communication only and does not have an effect on internally self-timed operations such as a program or erase cycle. please refer to ?hold? on page 46 for additional details on the hold operation. the hold pin is internally pulled-high and may be left floating if the hold function will not be used. however, it is recommended that the hold pin also be externally connected to v cc whenever possible. low input v cc device power supply: the v cc pin is used to supply the source voltage to the device. operations at invalid v cc voltages may produce spurious results and should not be attempted. -power gnd ground: the ground reference for the power supply. gnd should be connected to the system ground. -power figure 2-1. 8-vdfn (top view) figure 2-2. 16-soic (top view) table 2-1. pin descriptions (continued) symbol name and function asserted state type cs so (soi) wp gnd 1 2 3 4 8 7 6 5 vcc hold sck si (sio) hold vcc nc nc nc nc cs so (soi) 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 sck si (sio) nc nc nc nc gnd wp
5 3680e?dflash?12/08 AT25DF641 [preliminary] 3. block diagram figure 3-1. block diagram 4. memory array to provide the gr eatest flexibility, the memory array of th e AT25DF641 can be erased in four lev- els of granularity including a full chip erase. in addition, the array has been divided into physical sectors of uniform size, of which each sector can be individually protected from program and erase operations. the size of the physical sectors is optimized for both code and data storage applications, allowing both code and data segments to reside in their own isolated regions. the memory architecture diagram illustrates the breakdown of each erase level as well as the breakdown of each physical sector. flash memory array y-gating cs sck so (soi) si (sio) y-decoder address latch x-decoder i/o buffers and latches control and protection logic sram data buffer wp interface control and logic hold
6 3680e?dflash?12/08 AT25DF641 [preliminary] figure 4-1. memory architecture diagram internal sectoring for 64kb 32kb 4kb 1-256 byte protection, lockdown, bloc k erase block erase block erase page program and suspend functions (d8h command) (52h command) (20h command) (02h command) 4kb 7fffffh? 7ff000h 256 bytes 7fffffh? 7fff00h 4kb 7fefffh? 7fe000h 256 bytes 7ffeffh? 7ffe00h 4kb 7fdfffh ? 7fd000h 256 bytes 7ffdffh ? 7ffd00h 4kb 7fcfffh? 7fc000h 256 bytes 7ffcffh? 7ffc00h 4kb 7fbfffh? 7fb000h 256 bytes 7ffbffh? 7ffb00h 4kb 7fafffh ? 7fa000h 256 bytes 7ffaffh ? 7ffa00h 4kb 7f9fffh ? 7f9000h 256 bytes 7ff9ffh ? 7ff900h 4kb 7f8fffh ? 7f8000h 256 bytes 7ff8ffh ? 7ff800h 4kb 7f7fffh ? 7f7000h 256 bytes 7ff7ffh ? 7ff700h 4kb 7f6fffh ? 7f6000h 256 bytes 7ff6ffh ? 7ff600h 4kb 7f5fffh ? 7f5000h 256 bytes 7ff5ffh ? 7ff500h 4kb 7f4fffh ? 7f4000h 256 bytes 7ff4ffh ? 7ff400h 4kb 7f3fffh ? 7f3000h 256 bytes 7ff3ffh ? 7ff300h 4kb 7f2fffh ? 7f2000h 256 bytes 7ff2ffh ? 7ff200h 4kb 7f1fffh ? 7f1000h 256 bytes 7ff1ffh ? 7ff100h 4kb 7f0fffh ? 7f0000h 256 bytes 7ff0ffh ? 7ff000h 4kb 7effffh? 7ef000h 256 bytes 7fefffh? 7fef00h 4kb 7eefffh? 7ee000h 256 bytes 7feeffh? 7fee00h 4kb 7edfffh ? 7ed000h 256 bytes 7fedffh ? 7fed00h 4kb 7ecfffh? 7ec000h 256 bytes 7fecffh? 7fec00h 4kb 7ebfffh? 7eb000h 256 bytes 7febffh? 7feb00h 4kb 7eafffh ? 7ea000h 256 bytes 7feaffh? 7fea00h 4kb 7e9fffh ? 7e9000h 256 bytes 7fe9ffh ? 7fe900h 4kb 7e8fffh ? 7e8000h 256 bytes 7fe8ffh ? 7fe800h 4kb 7e7fffh ? 7e7000h 4kb 7e6fffh ? 7e6000h 4kb 7e5fffh ? 7e5000h 4kb 7e4fffh ? 7e4000h 256 bytes 0017ffh ? 001700h 4kb 7e3fffh ? 7e3000h 256 bytes 0016ffh ? 001600h 4kb 7e2fffh ? 7e2000h 256 bytes 0015ffh ? 001500h 4kb 7e1fffh ? 7e1000h 256 bytes 0014ffh ? 001400h 4kb 7e0fffh ? 7e0000h 256 bytes 0013ffh ? 001300h 256 bytes 0012ffh ? 001200h 256 bytes 0011ffh ? 001100h 256 bytes 0010ffh ? 001000h 4kb 00ffffh ? 00f000h 256 bytes 000fffh ? 000f00h 4kb 00efffh ? 00e000h 256 bytes 000effh ? 000e00h 4kb 00dfffh ? 00d000h 256 bytes 000dffh ? 000d00h 4kb 00cfffh ? 00c000h 256 bytes 000cffh ? 000c00h 4kb 00bfffh ? 00b000h 256 bytes 000bffh ? 000b00h 4kb 00afffh ? 00a000h 256 bytes 000affh ? 000a00h 4kb 009fffh ? 009000h 256 bytes 0009ffh ? 000900h 4kb 008fffh ? 008000h 256 bytes 0008ffh ? 000800h 4kb 007fffh ? 007000h 256 bytes 0007ffh ? 000700h 4kb 006fffh ? 006000h 256 bytes 0006ffh ? 000600h 4kb 005fffh ? 005000h 256 bytes 0005ffh ? 000500h 4kb 004fffh ? 004000h 256 bytes 0004ffh ? 000400h 4kb 003fffh ? 003000h 256 bytes 0003ffh ? 000300h 4kb 002fffh ? 002000h 256 bytes 0002ffh ? 000200h 4kb 001fffh ? 001000h 256 bytes 0001ffh ? 000100h 4kb 000fffh ? 000000h 256 bytes 0000ffh ? 000000h 64kb ? ? ? 64kb 32kb 32kb ? ? ? range ? ? ? ? ? ? range page program detail page address block address 64kb 64kb (sector 127) block erase detail 32kb 32kb 64kb (sector 0) 32kb 32kb ? ? ? 64kb (sector 126)
7 3680e?dflash?12/08 AT25DF641 [preliminary] 5. device operation the AT25DF641 is controlled by a set of instructions that are sent from a host controller, com- monly referred to as the spi master. the spi master communicates with the AT25DF641 via the spi bus which is comprised of four signal lines: chip select (cs ), serial clock (sck), serial input (si), and serial output (so). the AT25DF641 features a dual-input program mode in which the so pin becomes an input. similarly, the device also features a dual-output read mode in which the si pin becomes an out- put. in the dual-i nput byte/page program comm and description, the so pin will be referred to as the soi (serial output/input) pin, and in the dual-output read array command, the si pin will be referenced as the sio (serial input/output) pin. the spi protocol defines a total of four modes of operation (mode 0, 1, 2, or 3) with each mode differing in respect to the sck polarity and phase and how the polarity and phase control the flow of data on the spi bus. the AT25DF641 supports the two most common modes, spi modes 0 and 3. the only difference between spi modes 0 and 3 is the polarity of the sck signal when in the inactive state (when the spi master is in standby mode and not transferring any data). with spi modes 0 and 3, data is always latched in on the rising edge of sck and always output on the falling edge of sck. figure 5-1. spi mode 0 and 3 6. commands and addressing a valid instruction or operat ion must always be started by first asserting the cs pin. after the cs pin has been asserted, the host controller must then clock out a valid 8-bit opcode on the spi bus. following the opcode, instruction dependent information such as address and data bytes would then be clocked out by the host controller. all opcode, address, and data bytes are trans- ferred with the most-significant bit (msb) first. an operation is ended by deasserting the cs pin. opcodes not supported by the AT25DF641 will be ignored by th e device and no operation will be started. the device will continue to ignore any data pr esented on the si pin until the start of the next operation (cs pin being deasserted and then reasserted). in addition, if the cs pin is deas- serted before complete opcode and address information is sent to the device, then no operation will be performed and the device will simply retu rn to the idle state and wait for the next operation. addressing of the device requires a total of three bytes of information to be sent, representing address bits a23-a0. since the upper address limit of the AT25DF641 memory array is 7fffffh, address bit a23 is always ignored by the device. sck cs si so msb lsb msb lsb
8 3680e?dflash?12/08 AT25DF641 [preliminary] table 6-1. command listing command opcode clock frequency address bytes dummy bytes data bytes read commands read array 1bh 0001 1011 up to 100 mhz 3 2 1+ 0bh 0000 1011 up to 85 mhz 3 1 1+ 03h 0000 0011 up to 50 mhz 3 0 1+ dual-output read array 3bh 0011 1011 up to 85 mhz 3 1 1+ program and erase commands block erase (4-kbytes) 20h 0010 0000 up to 100 mhz 3 0 0 block erase (32-kbytes) 52h 0101 0010 up to 100 mhz 3 0 0 block erase (64-kbytes) d8h 1101 1000 up to 100 mhz 3 0 0 chip erase 60h 0110 0000 up to 100 mhz 0 0 0 c7h 1100 0111 up to 100 mhz 0 0 0 byte/page program (1 to 256 bytes) 02h 0000 0010 up to 100 mhz 3 0 1+ dual-input byte/page program (1 to 256 bytes) a2h 1010 0010 up to 100 mhz 3 0 1+ program/erase suspend b0h 1011 0000 up to 100 mhz 0 0 0 program/erase resume d0h 1101 0000 up to 100 mhz 0 0 0 protection commands write enable 06h 0000 0110 up to 100 mhz 0 0 0 write disable 04h 0000 0100 up to 100 mhz 0 0 0 protect sector 36h 0011 0110 up to 100 mhz 3 0 0 unprotect sector 39h 0011 1001 up to 100 mhz 3 0 0 global protect/unprotect use write st atus register byte 1 command read sector protection registers 3ch 0011 1100 up to 100 mhz 3 0 1+ security commands sector lockdown 33h 0011 0011 up to 100 mhz 3 0 1 freeze sector lockdown state 34h 0011 0100 up to 100 mhz 3 0 1 read sector lockdown registers 35h 0011 0101 up to 100 mhz 3 0 1+ program otp security register 9bh 1001 1011 up to 100 mhz 3 0 1+ read otp security register 77h 0111 0111 up to 100 mhz 3 2 1+ status register commands read status register 05h 0000 0101 up to 100 mhz 0 0 1+ write status register byte 1 01h 0000 0001 up to 100 mhz 0 0 1 write status register byte 2 31h 0011 0001 up to 100 mhz 0 0 1 miscellaneous commands reset f0h 1111 0000 up to 100 mhz 0 0 1 read manufacturer and device id 9fh 1001 1111 up to 85 mhz 0 0 1 to 4 deep power-down b9h 1011 1001 up to 100 mhz 0 0 0 resume from deep power-down abh 1010 1011 up to 100 mhz 0 0 0
9 3680e?dflash?12/08 AT25DF641 [preliminary] 7. read commands 7.1 read array the read array command can be used to sequentia lly read a continuous stream of data from the device by simply providing the clock signal once the initial starting address has been speci- fied. the device incorporates an internal address counter that automatically increments on every clock cycle. three opcodes (1bh, 0bh, and 03h) can be used for the read array command. the use of each opcode depends on the maximum clock frequency that will be used to read data from the device. the 0bh opcode can be used at any clock fr equency up to the maxi mum specified by f clk , and the 03h opcode can be used for lower frequency read operations up to the maximum specified by f rdlf . the 1bh opcode allows the highest read performance possible and can be used at any clock frequency up to the maximum specified by f max ; however, use of the 1bh opcode at clock frequencies above f clk should be reserved to systems employing the rapids protocol. to perform the read array operation, the cs pin must first be asserted and the appropriate opcode (1bh, 0bh, or 03h) must be clocked into the device. after the opcode has been clocked in, the three address bytes must be clocked in to specify the starting address location of the first byte to read within the memory array. following the three address bytes, additional dummy bytes may need to be clocked into the device depending on which opcode is used for the read array operation. if the 1bh opcode is used, then two dummy bytes must be clocked into the device after the three address bytes. if the 0bh opcode is used, then a single dummy byte must be clocked in after the address bytes. after the three address bytes (and the dummy byte s or byte if using opcodes 1bh or 0bh) have been clocked in, additional clock cycles will result in data being ou tput on the so pin. the data is always output with the msb of a byte first. when the last byte (7fffffh) of the memory array has been read, the device will cont inue reading back at the beginn ing of the array (000000h). no delays will be incurred when wrapping around from the end of the array to the beginning of the array. deasserting the cs pin will terminate the read operation and put the so pin into a high-imped- ance state. the cs pin can be deasserted at any time and does not require that a full byte of data be read. figure 7-1. read array - 1bh opcode sck cs si so msb msb 23 1 0 00011011 67 5 41011 9 812 394243 41 40 37 38 33 36 35 34 31 32 29 30 44 47 48 46 45 50 51 49 52 55 56 54 53 opcode aaaa aaa a a msb xxxxxxx x msb msb ddddddd d d d address bits a23-a0 don't care msb xxxxxxx x don't care data byte 1 high-impedance
10 3680e?dflash?12/08 AT25DF641 [preliminary] figure 7-2. read array - 0bh opcode figure 7-3. read array - 03h opcode 7.2 dual-output read array the dual-output read array command is similar to the standard read array command and can be used to sequentially read a continuous stream of data from the device by simply providing the clock signal once the initial starting address has been specified. unlike the standard read array command, however, the dual-output read array command allows two bits of data to be clocked out of the device on every cl ock cycle rather than just one. the dual-output read array command can be used at any clock frequency up to the maximum specified by f rddo . to perform the dual-output read array operation, the cs pin must first be asserted and the opcode of 3bh must be clocked into the device. after the opcode has been clocked in, the three address bytes must be clock ed in to specify the starting address location of the first byte to read within the memory array. following the three address bytes, a single dummy byte must also be clocked into the device. after the three address bytes and the dummy byte have been clocked in, additional clock cycles will result in data being output on both the so and sio pins. the data is always output with the msb of a byte first, and the msb is always output on the so pin. during the first clock cycle, bit 7 of the first data byte will be out put on the so pin while bit 6 of the same data byte will be output on the sio pin. during the next clock cycle, bits 5 and 4 of the first data byte will be output on the so and sio pins, respectively. the sequence cont inues with each byte of data being output after every four clock cycles. when the last byte (7fffffh) of the memory array has been read, sck cs si so msb msb 23 1 0 00001011 67 5 41011 9 812 394243 41 40 37 38 33 36 35 34 31 32 29 30 44 47 48 46 45 opcode aaaa aaa a a msb xxxxxxx x msb msb ddddddd d d d address bits a23-a0 don't care data byte 1 high-impedance sck cs si so msb msb 23 1 0 00000011 67 5 41011 9 812 3738 33 36 35 34 31 32 29 30 39 40 opcode aaaa aaa a a msb msb ddddddd d d d address bits a23-a0 data byte 1 high-impedance
11 3680e?dflash?12/08 AT25DF641 [preliminary] the device will continue reading ba ck at the beginning of the array (000000h ). no delays will be incurred when wrapping around from the end of the array to the beginning of the array. deasserting the cs pin will terminate the read operation and put the so and sio pins into a high-impedance state. the cs pin can be deasserted at any time and does not require that a full byte of data be read. figure 7-4. dual-output read array sck cs sio so msb msb 23 1 0 00111011 67 5 41011 9 812 394243 41 40 37 38 33 36 35 34 31 32 29 30 44 47 48 46 45 opcode aaaa aaa aa msb xxxxxxxx msb msb msb d 7 d 6 d 5 d 4 d 3 d 2 d 1 d 0 d 7 d 6 d 5 d 4 d 7 d 6 d 5 d 4 d 3 d 2 d 1 d 0 address bits a23-a0 don't care output data byte 1 output data byte 2 high-impedance
12 3680e?dflash?12/08 AT25DF641 [preliminary] 8. program and erase commands 8.1 byte/page program the byte/page program command allows anywhere from a single byte of data to 256 bytes of data to be programmed into previously erased memory locations. an erased memory location is one that has all eight bits set to the logical ?1? state (a byte value of ffh). before a byte/page program command can be started, the write enable command must have been previously issued to the device (see ?write enable? on page 21 ) to set the write enable latch (wel) bit of the status register to a logical ?1? state. to perform a byte/page program command, an opcode of 02h must be clocked into the device followed by the three address bytes denoting the first byte location of the memory array to begin programming at. after the address bytes have been clocked in, data can then be clocked into the device and will be stored in an intern al buffer. if the starting memory address denoted by a23-a0 does not fall on an even 256-byte page boundary (a7-a0 are not all 0), then special circumstances regarding which memory locations to be programmed will apply. in this si tuation, any data that is sent to the device that goes beyond the end of the page will wr ap around back to the beginning of the same pa ge. for example, if the starting address denoted by a23-a0 is 0000feh, and three bytes of data are sent to the device, then the first two bytes of da ta will be programmed at addresses 0000f eh and 0000ffh while the last byte of data will be programmed at address 000000h. the remaining bytes in the page (addresses 000001h through 0000fdh) will not be programmed and will remain in the erased state (ffh). in addition, if more than 256 bytes of data are sent to the device, then only the last 256 bytes sent will be latched into the internal buffer. when the cs pin is deasserted, the devi ce will take the data stored in the internal buffer and pro- gram it into the appropriate memory array locations based on the starting address specified by a23-a0 and the number of data bytes sent to the device. if less than 256 bytes of data were sent to the device, then the remain ing bytes within the page will no t be programmed and will remain in the erased state (ffh). the programming of the data bytes is internally self-timed and should take place in a time of t pp or t bp if only programming a single byte. the three address bytes and at least one complete byte of data must be clocked into the device before the cs pin is deasserted, and the cs pin must be deasserted on even byte boundaries (multiples of eight bits); otherwise, the device will abort the operation and no data will be pro- grammed into the memory array. in addition, if the address specified by a23-a0 points to a memory location within a sector that is in the protected state (see ?protect sector? on page 22 ) or locked down (see ?sector lockdown? on page 29 ), then the byte/pag e program command will not be executed, and the device will return to the idle state once the cs pin has been deas- serted. the wel bit in the status register will be reset back to the logical ?0? state if the program cycle aborts due to an incomplete address being sent, an incomplete byte of data being sent, the cs pin being deasserted on uneven byte boundaries, or because the memory location to be programmed is protected or locked down. while the device is programming, the status r egister can be read and will indicate that the device is busy. for faster throughput, it is recommended that the status register be polled rather than waiting the t bp or t pp time to determine if the data bytes have finished programming. at some point before the program cycle completes, the wel bit in the status register will be reset back to the logical ?0? state. the device also incorporates an intelligent programming algorithm that can detect when a byte location fails to program properly. if a programming error arises, it will be indicated by the epe bit in the status register.
13 3680e?dflash?12/08 AT25DF641 [preliminary] figure 8-1. byte program figure 8-2. page program 8.2 dual-input byte/page program the dual-input byte/page program command is similar to the standard byte/page program command and can be used to program anywhere from a single byte of data up to 256 bytes of data into previously erased memory locations. unlike the standard byte/page program com- mand, however, the dual-input byte/page program command allows two bits of data to be clocked into the device on every cl ock cycle rather than just one. before the dual-input byte/page program command can be started, the write enable command must have been previously issued to the device (see ?write enable? on page 21 ) to set the write enable latch (wel) bit of the status register to a logical ?1? state. to perform a dual-input byte/page program command, an opcode of a2h must be clocked into the device followed by the three address bytes denoting the first byte location of the memory array to begin program- ming at. after the address bytes have been clocked in, data can then be clocked into the device two bits at a time on both the soi and si pins. the data is always input with the msb of a byte first, and the msb is always input on the soi pin. during the first clock cycle, bit 7 of the firs t data byte would be input on the soi pin while bit 6 of the same data byte would be input on the si pin. during the next clock cycle, bits 5 and 4 of the first data byte would be input on the soi and si pins, respectively. the sequence would con- tinue with each byte of data being input after every four clock cycles. like the standard byte/page program command, all data clocked into the device is stored in an internal buffer. if the starting memory address denoted by a23-a0 does not fall on an even 256-byte page boundary (a7-a0 are not all 0), then special circumstances regarding which memory locations to sck cs si so msb msb 23 1 0 00000010 67 5 41011 9 812 39 37 38 33 36 35 34 31 32 29 30 opcode high-impedance aaaa aaa a a msb ddddddd d address bits a23-a0 data in sck cs si so msb msb 23 1 0 00000010 67 5 49 839 37 38 33 36 35 34 31 32 29 30 opcode high-impedance aa aaa a msb ddddddd d address bits a23-a0 data in byte 1 msb ddddddd d data in byte n
14 3680e?dflash?12/08 AT25DF641 [preliminary] be programmed will apply. in this si tuation, any data that is sent to the device that goes beyond the end of the page will wr ap around back to the beginning of the same pa ge. for example, if the starting address denoted by a23-a0 is 0000feh, and three bytes of data are sent to the device, then the first two bytes of da ta will be programmed at addresses 0000f eh and 0000ffh while the last byte of data will be programmed at address 000000h. the remaining bytes in the page (addresses 000001h through 0000fdh) will not be programmed and will remain in the erased state (ffh). in addition, if more than 256 bytes of data are sent to the device, then only the last 256 bytes sent will be latched into the internal buffer. when the cs pin is deasserted, the devi ce will take the data stored in the internal buffer and pro- gram it into the appropriate memory array locations based on the starting address specified by a23-a0 and the number of data bytes sent to the device. if less than 256 bytes of data were sent to the device, then the remain ing bytes within the page will no t be programmed and will remain in the erased state (ffh). the programming of the data bytes is internally self-timed and should take place in a time of t pp or t bp if only programming a single byte. the three address bytes and at least one complete byte of data must be clocked into the device before the cs pin is deasserted, and the cs pin must be deasserted on even byte boundaries (multiples of eight bits); otherwise, the device will abort the operation and no data will be pro- grammed into the memory array. in addition, if the address specified by a23-a0 points to a memory location within a sector that is in the protected state (see ?protect sector? on page 22 ) or locked down (see ?sector lockdown? on page 29 ), then the byte/pag e program command will not be executed, and the device will return to the idle state once the cs pin has been deas- serted. the wel bit in the status register will be reset back to the logical ?0? state if the program cycle aborts due to an incomplete address being sent, an incomplete byte of data being sent, the cs pin being deasserted on uneven byte boundaries, or because the memory location to be programmed is protected or locked down. while the device is programming, the status r egister can be read and will indicate that the device is busy. for faster throughput, it is recommended that the status register be polled rather than waiting the t bp or t pp time to determine if the data bytes have finished programming. at some point before the program cycle completes, the wel bit in the status register will be reset back to the logical ?0? state. the device also incorporates an intelligent programming algorithm that can detect when a byte location fails to program properly. if a programming error arises, it will be indicated by the epe bit in the status register. figure 8-3. dual-input byte program sck cs si soi msb msb 23 1 0 10100010 67 5 41011 9 812 3335 34 31 32 29 30 opcode aaaa aaa a a address bits a23-a0 msb d 7 d 6 d 5 d 4 d 3 d 2 d 1 d 0 input data byte high-impedance
15 3680e?dflash?12/08 AT25DF641 [preliminary] figure 8-4. dual-input page program 8.3 block erase a block of 4, 32, or 64 kbytes can be erased (all bits set to the logical ?1? state) in a single oper- ation by using one of three different opcodes for the block erase command. an opcode of 20h is used for a 4-kbyte erase, an opcode of 52h is us ed for a 32-kbyte erase, and an opcode of d8h is used for a 64-kbyte erase. before a block erase command can be started, the write enable command must have been previously issued to th e device to set the wel bit of the status reg- ister to a logical ?1? state. to perform a block erase, the cs pin must first be asserted and the appropriate opcode (20h, 52h, or d8h) must be clocked into the device. after the opcode has been clocked in, the three address bytes specifying an address within the 4-, 32-, or 64-kbyte block to be erased must be clocked in. any additional data clocked into the device will be ignored. when the cs pin is deas- serted, the device will erase the a ppropriate block. the erasing of the block is internally self- timed and should take place in a time of t blke . since the block erase command erases a region of bytes, the lower order address bits do not need to be decoded by the device. therefore, for a 4-kbyte erase, address bits a11-a0 will be ignored by the device and their values can be either a logical ?1? or ?0?. for a 32-kbyte erase, address bits a14-a0 will be igno red, and for a 64-kbyte erase, address bits a15-a0 will be ignored by the device. despite the lower order address bits not being decoded by the device, the complete three address byte s must still be clocked into the device before the cs pin is deas- serted, and the cs pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, the device will abor t the operation and no erase operation will be performed. if the address specified by a23-a0 points to a memory location within a sector that is in the pro- tected or locked down state, then the block erase command will not be executed, and the device will return to the idle state once the cs pin has been deasserted. the wel bit in the status register will be reset back to the logical ?0? state if the erase cycle aborts due to an incomplete address being sent, the cs pin being deasserted on uneven byte boundaries, or because a memory location within the region to be erased is protected or locked down. while the device is executing a successful erase cycle, the status regist er can be read and will indicate that the device is busy. for faster throughput, it is recommended that the status regis- ter be polled rather than waiting the t blke time to determine if the device has finished erasing. at some point before the erase cycle completes, the wel bit in the status register will be reset back to the logical ?0? state. sck cs si soi msb msb 23 1 0 10100010 67 5 41011 9 812 39 37 38 33 36 35 34 31 32 29 30 opcode aaaa aaa a a msb msb d 7 d 6 d 5 d 4 d 3 d 2 d 1 d 0 d 7 d 6 d 5 d 4 d 3 d 2 d 1 d 0 address bits a23-a0 input data byte 1 msb d 7 d 6 d 5 d 4 d 3 d 2 d 1 d 0 input data byte n input data byte 2 high-impedance
16 3680e?dflash?12/08 AT25DF641 [preliminary] the device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase properly. if an er ase error occurs, it will be indi cated by the epe bit in the status register. figure 8-5. block erase 8.4 chip erase the entire memory array can be erased in a single operation by using the chip erase command. before a chip erase command can be started, the write enable command must have been pre- viously issued to the device to set the wel bit of the status register to a logical ?1? state. two opcodes, 60h and c7h, can be used for the chip erase command. there is no difference in device functionality when utilizin g the two opcodes, so they c an be used interchangeably. to perform a chip erase, one of the two opcodes (60h or c7h) must be clocked into the device. since the entire memory array is to be erased, no address bytes need to be clocked into the device, and any data clocke d in after the opcode will be ignored. when the cs pin is deas- serted, the device will erase the enti re memory array. the erasing of the device is internally self- timed and should take place in a time of t chpe . the complete opcode must be clocked into the device before the cs pin is deasserted, and the cs pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, no erase will be performed. in addition , if any sector of the memory array is in the protected or locked down state, then the chip erase command will not be executed, and the device will return to the idle state once the cs pin has been deasserted. the wel bit in the status register will be reset back to the logical ?0? state if the cs pin is deasserted on uneven byte boundaries or if a sector is in the protected or locked down state. while the device is executing a successful erase cycle, the status regist er can be read and will indicate that the device is busy. for faster throughput, it is recommended that the status regis- ter be polled rather than waiting the t chpe time to determine if the device has finished erasing. at some point before the erase cycle completes, the wel bit in the status register will be reset back to the logical ?0? state. the device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase properly. if an er ase error occurs, it will be indi cated by the epe bit in the status register. sck cs si so msb msb 23 1 0 cccccccc 67 5 41011 9 812 31 29 30 27 28 26 opcode aaaa aaa a a a a a address bits a23-a0 high-impedance
17 3680e?dflash?12/08 AT25DF641 [preliminary] figure 8-6. chip erase 8.5 program/erase suspend in some code plus data storage applications, it is often necessary to process certain high-level system interrupts that require relatively immediate reading of code or data from the flash mem- ory. in such an instance, it may not be possible for the system to wait the microseconds or milliseconds required for the flash memory to complete a program or erase cycle. the pro- gram/erase suspend command allows a program or erase operation in progress to a particular 64-kbyte sector of the flash memory array to be suspended so that other device operations can be performed. for example, by suspending an erase operation to a particular sector, the system can perform functions such as a program or read operation within another 64-kbyte sector in the device. other device operations, such as a read status register, can also be performed while a program or erase operation is suspended. table 8-1 outlines the operations that are allowed and not allowed during a program or erase suspend. since the need to suspend a program or erase operation is immediate, the write enable com- mand does not need to be issued prior to the program/erase suspend command being issued. therefore, the program/erase suspend command operates independently of the state of the wel bit in the status register. to perform a program/erase suspend, the cs pin must first be asserted and the opcode of b0h must be clocked into the device. no address by tes need to be clocked into the device, and any data clocked in after the opco de will be ignored. when the cs pin is deasserted, the program or erase operation curr ently in progress will be sus pended within a time of t susp . the program sus- pend (ps) bit or the erase suspe nd (es) bit in the status regist er will then be set to the logical ?1? state to indicate that the program or erase operation has been suspended. in addition, the rdy/bsy bit in the status register will indicate that the device is ready for another operation. the complete opcode must be clocked into the device before the cs pin is deasserted, and the cs pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, no suspend operation will be performed. read operations are not allowed to a 64-kbyte sector that has had its program or erase opera- tion suspended. if a read is attempted to a suspended sector, then the device will output undefined data. therefore, when performing a read array operation to an unsuspended sector and the device?s internal address counter increments and crosses the sector boundary to a sus- pended sector, the device will then start outputting undefined da ta continuously until the address counter increments and crosses a sector boundary to an unsuspended sector. a program operation is not allowed to a sector that has been erase suspended. if a program operation is attempted to an erase suspended sector , then the program operation will abort and the wel bit in the status register will be reset back to the logical ?0? state. likewise, an erase sck cs si so msb 23 1 0 cccccccc 67 5 4 opcode high-impedance
18 3680e?dflash?12/08 AT25DF641 [preliminary] operation is not allowed to a sector that has been program suspended. if attempted, the erase operation will abort and the wel bi t in the status register will be reset to a logical ?0? state. during an erase suspend, a program operation to a different 64-kbyte sector can be started and subsequently suspended. this results in a si multaneous erase suspend/program suspend con- dition and will be indicated by the states of both the es and ps bits in the status register being set to the logical ?1? state. if a reset operation (see ?reset? on page 42 ) is performed while a sector is erase suspended, the suspend operation will abort and the contents of the block in the suspended sector will be left in an undefined state. however, if a reset is performed while a sector is program suspended, the suspend operation will abort but only the contents of the page that was being programmed and subsequently suspended will be undefined. the remaining pages in the 64-kbyte sector will retain their previous contents. if an attempt is made to perform an operation that is not allowed during a program or erase sus- pend, such as a protec t sector operation, th en the device will simply ignore the opcode and no operation will be performed. the state of the wel bit in the stat us register, as well as the sprl (sector protection registers locked) and sle (sector lockdown enabl ed) bits, will not be affected.
19 3680e?dflash?12/08 AT25DF641 [preliminary] . table 8-1. operations allowed and not allowed during a pr ogram or erase suspend command operation during program suspend operation during erase suspend read commands read array (all opcodes) allowed allowed program and erase commands block erase not allowed not allowed chip erase not allowed not allowed byte/page program (all opcodes) not allowed allowed program/erase suspend not allowed allowed program/erase resume allowed allowed protection commands write enable not allowed allowed write disable not allowed allowed protect sector not allowed not allowed unprotect sector not allowed not allowed global protect/unprotect not allowed not allowed read sector protection registers allowed allowed security commands sector lockdown not allowed not allowed freeze sector lockdown state not allowed not allowed read sector lockdown registers allowed allowed program otp security register not allowed not allowed read otp security register allowed allowed status register commands read status register allowed allowed write status register (all op codes) not allowed not allowed miscellaneous commands reset allowed allowed read manufacturer and device id allowed allowed deep power-down not allowed not allowed resume from deep power-down not allowed not allowed
20 3680e?dflash?12/08 AT25DF641 [preliminary] figure 8-7. program/erase suspend 8.6 program/erase resume the program/erase resume command allows a suspended program or erase operation to be resumed and continue programming a flash page or erasing a flash memory block where it left off. as with the program/erase suspend command, the write enable command does not need to be issued prior to the program/erase resume command being issued. therefore, the pro- gram/erase resume command operates independently of the state of the wel bit in the status register. to perform a program/erase resume, the cs pin must first be asserted and the opcode of d0h must be clocked into the device. no address by tes need to be clocked into the device, and any data clocked in after the opco de will be ignored. when the cs pin is deasserted, the program or erase operation currentl y suspended will be resume d within a time of t res . the ps bit or the es bit in the status register will then be reset back to the logical ?0? state to indicate that the pro- gram or erase operatio n is no longer suspend ed. in addition, the rdy/bsy bit in the status register will indicate that the device is busy performing a program or erase operation. the com- plete opcode must be clocked into the device before the cs pin is deasserted, and the cs pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, no resume operation will be performed. during a simultaneous erase suspend/program suspend condition, issuing the program/erase resume command will result in the program operation resuming first. after the program opera- tion has been completed, the program/erase resume command must be issued again in order for the erase operation to be resumed. while the device is busy resuming a program or erase operation, any attempts at issuing the program/erase suspend command will be ignored. therefore, if a resumed program or erase operation needs to be subsequently suspended again, the system must either wait the entire t res time before issuing the program/erase suspend command, or it must check the status of the rdy/bsy bit or the appro priate ps or es bit in the status register to determ ine if the previ- ously suspended program or erase operation has resumed. sck cs si so msb 23 1 0 10110000 67 5 4 opcode high-impedance
21 3680e?dflash?12/08 AT25DF641 [preliminary] figure 8-8. program/erase resume 9. protection commands and features 9.1 write enable the write enable command is used to set the write enable latch (wel) bit in the status regis- ter to a logical ?1? state. the wel bit must be set before a byte/page program, erase, protect sector, unprotect sector, sector lockdown, freeze sector lockdown state, program otp security register, or write status register co mmand can be executed. this makes the issuance of these commands a two step process, thereby reducing the chances of a command being accidentally or erroneously executed. if the wel bi t in the status register is not set prior to the issuance of one of thes e commands, then the comma nd will not be executed. to issue the write enable command, the cs pin must first be asserted and the opcode of 06h must be clocked into the device. no address by tes need to be clocked into the device, and any data clocked in afte r the opcode will be ig nored. when the cs pin is deasserted, the wel bit in the status register will be set to a logical ?1?. the complete opcode must be clocked into the device before the cs pin is deasserted, and the cs pin must be deasserted on an even byte boundary (multiples of ei ght bits); otherwise, the device will abort the operatio n and the state of the wel bit will not change. figure 9-1. write enable sck cs si so msb 23 1 0 11010000 67 5 4 opcode high-impedance sck cs si so msb 23 1 0 00000110 67 5 4 opcode high-impedance
22 3680e?dflash?12/08 AT25DF641 [preliminary] 9.2 write disable the write disable command is used to reset the write enable latch (wel) bit in the status reg- ister to the logical "0" state. with the wel bi t reset, all byte/page program, erase, protect sector, unprotect sector, sector lockdown, freeze sector lockdown state, program otp security register, and write status register commands will not be executed. other conditions can also cause the wel bit to be reset; for more details, refer to the wel bit section of the sta- tus register description. to issue the write disable command, the cs pin must first be asserted and the opcode of 04h must be clocked into the device. no address by tes need to be clocked into the device, and any data clocked in afte r the opcode will be ig nored. when the cs pin is deasserted, the wel bit in the status register will be reset to a logical ?0 ?. the complete opcode mu st be clocked into the device before the cs pin is deasserted, and the cs pin must be deasserted on an even byte boundary (multiples of ei ght bits); otherwise, the device will abort the operatio n and the state of the wel bit will not change. figure 9-2. write disable 9.3 protect sector every physical 64-kbyte sector of the device has a corresponding single-bit sector protection register that is used to control the software protection of a sector. upon device power-up, each sector protection register will default to the logical ?1? state indicating that all sectors are pro- tected and cannot be programmed or erased. issuing the protect se ctor command to a particular sector address will set the corresponding sector protection register to the logical ?1? st ate. the following table outlines the two states of the sector protection registers. before the protect sector command can be issued, the write enable command must have been previously issued to set the wel bi t in the status register to a logical ?1?. to issue the protect sector command, the cs pin must first be asserted and the opcode of 36h must be clocked into the device followed by three address bytes designating any address within the sector to be pro- tected. any additional data clocked into the device will be ignored. when the cs pin is deasserted, the sector protection register co rresponding to the physical sector addressed by sck cs si so msb 23 1 0 00000100 67 5 4 opcode high-impedance table 9-1. sector protection register values value sector protection status 0 sector is unprotected and can be programmed and erased. 1 sector is protected and cannot be programm ed or erased. this is the default state.
23 3680e?dflash?12/08 AT25DF641 [preliminary] a23-a0 will be set to the logical ?1 ? state, and the sector itself will then be protected from pro- gram and erase operations . in addition, the wel bit in the st atus register w ill be reset back to the logical ?0? state. the complete three address bytes must be clocked into the device before the cs pin is deas- serted, and the cs pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, the device will abort the op eration. when the device aborts the pr otect sector opera- tion, the state of the sector prot ection register will be unchange d, and the wel bit in the status register will be reset to a logical ?0?. as a safeguard against accidental or erroneous protecting or unprotecting of sectors, the sector protection registers can themselves be locked fr om updates by using the sprl (sector protec- tion registers locked) bit of the status register (please refer to the status register description for more details). if the sector protection regi sters are locked, then any attempts to issue the protect sector command will be i gnored, and the device will reset the wel bit in the status reg- ister back to a logical ?0? and return to the idle state once the cs pin has been deasserted. figure 9-3. protect sector 9.4 unprotect sector issuing the unprotect sector co mmand to a particular sector ad dress will reset the correspond- ing sector protection register to the logical ?0? state (see table 9-1 for sector protection register values). every physical sector of the device has a corresponding single-bit sector pro- tection register that is used to control the software protection of a sector. before the unprotect sector command can be issued, the write enable command must have been previously issued to set the wel bit in the status register to a logical ?1?. to issue the unprotect sector command, the cs pin must first be asserted and the opcode of 39h must be clocked into the device. after the opcode has been clocked in, the three address bytes designat- ing any address within the sector to be unprotected must be clocked in. any additional data clocked into the device after the addre ss bytes will be ignored. when the cs pin is deasserted, the sector protection register corresponding to the sector addr essed by a23-a0 will be reset to the logical ?0? state, and the sect or itself will be unprotected. in addition, the wel bit in the sta- tus register will be reset back to the logical ?0? state. the complete three address bytes must be clocked into the device before the cs pin is deas- serted, and the cs pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, the device will ab ort the operation, the state of t he sector protection register will be unchanged, and the wel bit in the status regist er will be reset to a logical ?0?. sck cs si so msb msb 23 1 0 00110110 67 5 41011 9 812 31 29 30 27 28 26 opcode aaaa aaa a a a a a address bits a23-a0 high-impedance
24 3680e?dflash?12/08 AT25DF641 [preliminary] as a safeguard against accidental or erroneous locking or unlocking of sectors, the sector pro- tection registers can themselves be locked from updates by using the sprl (sector protection registers locked) bit of the status register (please refer to the status register description for more details). if the sector protection registers are locked, then any attempts to issue the unprotect sector command will be i gnored, and the device will rese t the wel bit in the status register back to a logical ?0? and return to the idle state once the cs pin has been deasserted. figure 9-4. unprotect sector 9.5 global protect/unprotect the global protect and global unprotect features can work in conjunction with the protect sec- tor and unprotect sector functions. for example, a system can globally protect the entire memory array and then use the unprotect sector command to individually unprotect certain sec- tors and individually reprotect t hem later by using the protec t sector command. likewise, a system can globally unprotect the entire memory array and then individually protect certain sec- tors as needed. performing a global protect or global unprotec t is accomplished by writing a certain combina- tion of data to the status register using the write status register byte 1 command (see ?write status register byte 1? on page 40 for command execution details). the write status register command is also used to modify the sprl (secto r protection registers locked) bit to control hardware and software locking. to perform a global protect, the appropriate wp pin and sprl conditions must be met, and the system must write a logical ?1? to bits 5, 4, 3, and 2 of the first byte of the status register. con- versely, to perform a global unprotect, the same wp and sprl conditions must be met but the system must write a logical ?0? to bits 5, 4, 3, and 2 of the first byte of the status register. table 9-2 details the conditions necessary for a global protect or global unprotect to be performed. sectors that have been erase or program suspended must remain in the unprotected state. if a global protect operation is attempted while a sect or is erase or program suspended, the protec- tion operation will abort, the protection states of all sectors in the flash memory array will not change, and wel bit in the status regist er will be reset back to a logical ?0?. sck cs si so msb msb 23 1 0 00111001 67 5 41011 9 812 31 29 30 27 28 26 opcode aaaa aaa a a a a a address bits a23-a0 high-impedance
25 3680e?dflash?12/08 AT25DF641 [preliminary] essentially, if the sprl bit of the status register is in the logical ?0? state (sector protection registers are not locked), then writing a 00h to th e first byte of the status register will perform a global unprotect without changing the state of the sprl bit. similarly, writing a 7fh to the first byte of the status register will perform a global protect and keep the sprl bit in the logical ?0? state. the sprl bit can, of course, be changed to a logical ?1? by writing an ffh if software-lock- ing or hardware-locking is desired along with the global protect. table 9-2. valid sprl and global protect/unprotect conditions wp state current sprl value new write status register byte 1 data protection operation new sprl value bit 7 6 5 4 3 2 1 0 00 0 x 0 0 0 0 x x 0 x 0 0 0 1 x x ? 0 x 1 1 1 0 x x 0 x 1 1 1 1 x x 1 x 0 0 0 0 x x 1 x 0 0 0 1 x x ? 1 x 1 1 1 0 x x 1 x 1 1 1 1 x x global unprotect ? all sector pr otection registers reset to 0 no change to current protection. no change to current protection. no change to current protection. global protect ? all sector protection registers set to 1 global unprotect ? all sector pr otection registers reset to 0 no change to current protection. no change to current protection. no change to current protection. global protect ? all sector protection registers set to 1 0 0 0 0 0 1 1 1 1 1 0 1 x x x x x x x x no change to the current protection level. all sectors currently protected will remain protected and all sectors currently unprotected will remain unprotected. the sector protection regist ers are hard-locked and cannot be changed when the wp pin is low and the current state of sprl is 1. therefore, a global protect/unprotect will not occur. in addition, the sprl bit cannot be changed (the wp pin must be high in order to change sprl back to a 0). 10 0 x 0 0 0 0 x x 0 x 0 0 0 1 x x ? 0 x 1 1 1 0 x x 0 x 1 1 1 1 x x 1 x 0 0 0 0 x x 1 x 0 0 0 1 x x ? 1 x 1 1 1 0 x x 1 x 1 1 1 1 x x global unprotect ? all sector pr otection registers reset to 0 no change to current protection. no change to current protection. no change to current protection. global protect ? all sector protection registers set to 1 global unprotect ? all sector pr otection registers reset to 0 no change to current protection. no change to current protection. no change to current protection. global protect ? all sector protection registers set to 1 0 0 0 0 0 1 1 1 1 1 11 0 x 0 0 0 0 x x 0 x 0 0 0 1 x x ? 0 x 1 1 1 0 x x 0 x 1 1 1 1 x x 1 x 0 0 0 0 x x 1 x 0 0 0 1 x x ? 1 x 1 1 1 0 x x 1 x 1 1 1 1 x x no change to the current protection level. all sectors currently protected will remain protected, and all sectors currently unprotected wi ll remain unprotected. the sector protection registers are soft-locked and cannot be changed when the current state of sprl is 1. therefore, a global protect/unprotect will not occur. however, the sprl bit can be changed back to a 0 from a 1 since the wp pin is high. to perform a global protect/unprotect, the write status register command must be issued again after the sprl bit has been changed from a 1 to a 0. 0 0 0 0 0 1 1 1 1 1
26 3680e?dflash?12/08 AT25DF641 [preliminary] if the desire is to only change the sprl bit wi thout performing a global protect or global unpro- tect, then the system can simply write a 0fh to the first byte of the status register to change the sprl bit from a logical ?1? to a logical ?0? provided the wp pin is deasserted. likewise, the sys- tem can write an f0h to change the sprl bit from a logical ?0? to a logical ?1? without affecting the current sector protection status (no changes will be made to the sector protection registers). when writing to the first byte of the status register, bits 5, 4, 3, and 2 will not actually be modi- fied but will be decoded by the device for t he purposes of the global protect and global unprotect functions. only bit 7, the sprl bit, will actually be modified. t herefore, when reading the first byte of the status register, bits 5, 4, 3, and 2 will not reflect the values written to them but will instead indicate the status of the wp pin and the sector protection status. please refer to ?read status register? on page 35 and table 11-1 on page 36 for details on the status register format and what values can be read for bits 5, 4, 3, and 2. 9.6 read sector pr otection registers the sector protection registers can be read to determine the current software protection status of each sector. reading the se ctor protection registers, how ever, will not determine the status of the wp pin. to read the sector protection register for a particular sector, the cs pin must first be asserted and the opcode of 3ch must be clocked in. once the opcode has been clocked in, three address bytes designating any address withi n the sector must be clocked in. after the last address byte has been clocked in, the device will begin output ting data on the so pin during every subse- quent clock cycle. the data being output will be a repeating byte of either ffh or 00h to denote the value of the appropriate sector protection register. at clock frequencies above f clk , the first byte of data output will not be valid. theref ore, if operat- ing at clock frequencies above f clk , at least two bytes of data must be clocked out from the device in order to determine the correct status of the appropriate sector protection register. deasserting the cs pin will terminate the read operation and put the so pin into a high-imped- ance state. the cs pin can be deasserted at any time and does not require that a full byte of data be read. in addition to reading the individual sector pr otection registers, the software protection status (swp) bits in the status register can be read to determine if all, some, or none of the sectors are software protected (refer to ?read status register? on page 35 for more details). table 9-3. read sector protection register - output data output data sector protection register value 00h sector protection register valu e is 0 (sector is unprotected). ffh sector protection register va lue is 1 (sector is protected).
27 3680e?dflash?12/08 AT25DF641 [preliminary] figure 9-5. read sector protection register 9.7 protected states and th e write protect (wp ) pin the wp pin is not linked to the memory array itself and has no direct effect on the protection sta- tus or lockdown status of the memory array. instead, the wp pin, in conjunction with the sprl (sector protection registers locked) bit in the st atus register, is used to control the hardware locking mechanism of the device. for hardware locking to be active, two conditions must be met- the wp pin must be asserted and the sprl bit must be in the logical ?1? state. when hardware locking is active, the sector protection registers are locked and the sprl bit itself is also locked. therefore, sectors that are protected will be locked in the protected state, and sectors that are unprotected will be locked in the unprotecte d state. these states cannot be changed as long as hardware locking is active, so the protect sector, unprotect sector, and write status register commands will be ignored. in order to modi fy the protection status of a sector, the wp pin must first be deasserted, and the sprl bit in the status register must be reset back to the logical ?0? state using the write status register command. when resetting the sprl bit back to a logical ?0?, it is not possible to perform a global protect or global unprotect at the same time since the sector protection registers remain soft-locked until after the write status register command has been executed. if the wp pin is permanently connected to gnd, then once the sprl bit is set to a logical ?1?, the only way to reset the bit back to the logical ?0 ? state is to power-cycle the device. this allows a system to power-up with all sectors software pr otected but not hardwa re locked. therefore, sectors can be unprotected and protected as needed and then hardware locked at a later time by simply setting the sprl bit in the status register. when the wp pin is deasserted, or if the wp pin is permanently connected to v cc , the sprl bit in the status regist er can still be set to a logical ?1? to lo ck the sector protec tion registers. this provides a software locking ability to prevent erro neous protect sector or unprotect sector com- mands from being processed. when changing the sprl bit to a logical ?1? from a logical ?0?, it is also possible to perform a global protect or global unprotect at the same time by writing the appropriate values into bits 5, 4, 3, and 2 of the first byte of the status register. tables 9-4 and 9-5 detail the various protection and locking states of the device. sck cs si so msb msb 23 1 0 00111100 67 5 41011 9 812 3738 33 36 35 34 31 32 29 30 39 40 opcode aaaa aaa a a msb msb ddddddd d d d address bits a23-a0 data byte high-impedance
28 3680e?dflash?12/08 AT25DF641 [preliminary] note: 1. ?n? represents a sector number table 9-4. sector protection register states wp sector protection register n (1) sector n (1) x (don't care) 0 unprotected 1protected table 9-5. hardware and software locking wp sprl locking sprl change allowed sector protection registers 0 0 can be modified from 0 to 1 unlocked and modifiable using the protect and unprotect sector commands. global protect and unprotect can also be performed. 01 hardware locked locked locked in current state. protect and unprotect sector commands will be ignored. global protect and unprotect cannot be performed. 1 0 can be modified from 0 to 1 unlocked and modifiable using the protect and unprotect sector commands. global protect and unprotect can also be performed. 11 software locked can be modified from 1 to 0 locked in current state. protect and unprotect sector commands will be ignored. global protect and unprotect cannot be performed.
29 3680e?dflash?12/08 AT25DF641 [preliminary] 10. security commands 10.1 sector lockdown certain applications require that portions of the flash memory array be permanently protected against malicious attempts at altering progra m code, data modules, security information, or encryption/decryption algorithms , keys, and routines. to addres s these applications, the device incorporates a sector lockdown mechanism that allows any combination of individual 64-kbyte sectors to be permanently locked so that they become read only. once a sector is locked down, it can never be erased or programmed again, and it can never be unlocked from the locked down state. each 64-kbyte physical sector has a corresponding single-bit sector lockdown register that is used to control the lockdown stat us of that sector. these regist ers are nonvolatile and will retain their state even after a device power-cycle or re set operation. the following table outlines the two states of the sector lockdown registers. issuing the sector lockdown co mmand to a part icular sector address will set the corresponding sector lockdown register to the logical ?1? st ate. each sector lockdown register can only be set once; therefore, once set to the logical ?1? state, a sector lockdown register cannot be reset back to the logical ?0? state. before the sector lockdown command can be issued, the write enable command must have been previously issued to set the wel bit in the status register to a logical ?1?. in addition, the sector lockdown enabled (sle) bit in the status register must have also been previously set to the logical ?1? state by using the write status register byte 2 command (see ?write status reg- ister byte 2? on page 41 ). to issue the sector lockdown command, the cs pin must first be asserted and the opcode of 33h must be clocked into the device followed by three address bytes designating any address within the 64-kbyte sector to be locked down. after the three address bytes have been clocked in, a confirmation byte of d0h must also be clocked in immediately fol- lowing the three address bytes. any additional dat a clocked into the device after the first byte of data will be ignored. when the cs pin is deasserted, the sector lockdown register correspond- ing to the sector addressed by a 23-a0 will be set to the logical ?1? state, and the sector itself will then be permanently locked down from program and erase operations within a time of t lock . in addition, the wel bit in the st atus register will be reset ba ck to the logical ?0? state. the complete three address bytes and the correct confirmation byte value of d0h must be clocked into the de vice before the cs pin is deasserted, and the cs pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, the device will abort the operation. when the device aborts the sector lockdown operation, the state of the corresponding sector lockdown register as well as the sle bit in th e status register will be unchanged; however, the wel bit in the status register will be reset to a logical ?0?. as a safeguard against accidental or erroneous locking down of sectors, the sector lockdown command can be enabled and disabled as needed by using the sle bit in the status register. in addition, the current sector lockdown state can be frozen so that no further modifications to table 10-1. sector lockdown register values value sector lockdown status 0 sector is not locked down and can be progra mmed and erased. this is the default state. 1 sector is permanently locked down and can never be programmed or erased again.
30 3680e?dflash?12/08 AT25DF641 [preliminary] the sector lockdown registers can be made (see ?freeze sector lockdown state? below). if the sector lockdown command is disabled or if the sector lockdown state is frozen, then any attempts to issue the sector lockdown command will be ignored, and the device will reset the wel bit in the status register back to a logical ?0? and return to the idle state once the cs pin has been deasserted. figure 10-1. sector lockdown 10.2 freeze sector lockdown state the current sector lockdown state can be permanently frozen so that no further modifications to the sector lockdown registers can be made; th erefore, the sector lo ckdown command will be permanently disabled, and no additional sectors can be locked down aside from those already locked down. any attempts to issue the sector lockdown command after the sector lockdown state has been frozen will be ignored. before the freeze sector lockdown state command can be issued, the write enable command must have been previously issued to set the wel bit in the status register to a logical ?1?. in addition, the sector lockdown enabled (sle) bit in the status register must have also been previously set to the logical ?1? state. to issue the freeze sector lockdown state command, the cs pin must first be asserted and the opcode of 34h must be clocked into the device followed by three command specific address bytes of 55aa 40h. after the three address bytes have been clocked in, a confirmation byte of d0h must be clocked in immediately following the three address bytes. any additional data clock ed into the device will be ignored. when the cs pin is deasserted, the current sector lockdown state wil l be permanently frozen within a time of t lock . in addition, the wel bit in the st atus register will be reset back to the logical ?0? state, and the sle bit will be permanently reset to a logical ?0? to indicate that the sector lockdown command is permanently disabled. the complete and correct three address bytes and the confirmation byte must be clocked into the device before the cs pin is deasserted, and the cs pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, the device will abort the operation. when the device aborts the freeze sector lockdown state operation, the wel bit in the status register will be reset to a logical ?0?; however, th e state of the sle bit will be unchanged. sck cs si so msb msb 23 1 0 00110011 67 5 49 839 37 38 33 36 35 34 31 32 29 30 opcode high-impedance aa aaa a msb 1101000 0 address bits a23-a0 confirmation byte in
31 3680e?dflash?12/08 AT25DF641 [preliminary] figure 10-2. freeze sector lockdown state 10.3 read sector lockdown registers the sector lockdown registers can be read to determine the current lockdown status of each physical 64-kbyte sector. to read the sector lockdown register for a particular 64-kbyte sec- tor, the cs pin must first be asserted and the opcode of 35h must be clocked in. once the opcode has been clocked in, three address bytes designating any address within the 64-kbyte sector must be clocked in. afte r the address bytes have been cl ocked in, data will be output on the so pin during every subsequent clock cycle. the data being output will be a repeating byte of either ffh or 00h to denote the value of the appropriate sector lockdown register. at clock frequencies above f clk , the first byte of data output will not be valid. theref ore, if operat- ing at clock frequencies above f clk , at least two bytes of data must be clocked out from the device in order to determine the correct status of the appropriate sector lockdown register. deasserting the cs pin will terminate the read operation and put the so pin into a high-imped- ance state. the cs pin can be deasserted at any time and does not require that a full byte of data be read. figure 10-3. read sector lockdown register sck cs si so msb msb 23 1 0 00110100 67 5 49 839 37 38 33 36 35 34 31 32 29 30 opcode high-impedance 01 000 0 msb 1101000 0 address bits a23-a0 confirmation byte in table 10-2. read sector lockdown register ? output data output data sector lockdown register value 00h sector lockdown register value is 0 (sector is not locked down). ffh sector lockdown register value is 1 (sector is permanently locked down). sck cs si so msb msb 23 1 0 00110101 67 5 41011 9 812 394243 41 40 37 38 33 36 35 34 31 32 29 30 44 47 48 46 45 opcode aaaa aaa a a msb xxxxxxx x msb msb ddddddd d d d address bits a23-a0 don't care data byte high-impedance
32 3680e?dflash?12/08 AT25DF641 [preliminary] 10.4 program otp security register the device contains a specialized otp (one-time programmable) security register that can be used for purposes such as unique device serializ ation, system-level electronic serial number (esn) storage, locked key storage, etc. the otp security register is independent of the main flash memory array and is comprised of a total of 128 bytes of memory divided into two por- tions. the first 64 bytes (byte locations 0 through 63) of the otp security register are allocated as a one-time user-programmable space. once these 64 bytes have been programmed, they cannot be erased or reprogrammed. the remaining 64 bytes of the otp security register (byte locations 64 through 127) are factory progra mmed by atmel and will contain a unique value for each device. the factory programmed data is fixed and cannot be changed. the user-programmable portion of the otp security register does not need to be erased before it is programmed. in addition, the program otp security register command operates on the entire 64-byte user-programmable portion of the otp security register at one time. once the user-programmable space has been programmed wit h any number of bytes, the user-program- mable space cannot be programmed again; therefore, it is not possible to only program the first two bytes of the register and then program the remaining 62 bytes at a later time. before the program otp security register command can be issued, the write enable command must have been previously issued to set the wel bit in the status register to a logical ?1?. to program the otp security register, the cs pin must first be asserted and an opcode of 9bh must be clocked into the device followed by the three address bytes denoting the first byte loca- tion of the otp security register to begin programming at. since the size of the user- programmable portion of the otp security register is 64 bytes, the upper order address bits do not need to be decoded by the device. therefore, ad dress bits a23-a6 will be ignored by the device and their values can be either a logical ?1? or ?0?. after the address bytes have been clocked in, data can then be cloc ked into the device and will be st ored in the internal buffer. if the starting memory address denoted by a23-a0 does not start at the beginning of the otp security register memory space (a5-a0 are not all 0), then special circumstances regarding which otp security register locations to be programmed will apply. in this situation, any data that is sent to the device that goes beyond the end of the 64 -byte user-progr ammable space will wrap around back to the beginning of the otp security register. for example, if the starting address denoted by a23-a0 is 00003eh, and three bytes of data are sent to the device, then the first two bytes of data will be programmed at otp se curity register ad dresses 00003eh and 00003fh while the last byte of data will be programmed at address 000000h. the remaining bytes in the otp security register (a ddresses 000001h through 0 0003dh) will not be pro- grammed and will remain in the eras ed state (ffh). in addition, if more than 64 bytes of data are sent to the device, then only the last 64 bytes sent will be latched into the internal buffer. when the cs pin is deasserted, the devi ce will take the data stored in the internal buffer and pro- gram it into the appropriate otp security register locations based on the starting address specified by a23-a0 and the number of data bytes s ent to the device. if less than 64 bytes of data were sent to the device, then the remaining bytes within the otp security register will not table 10-3. otp security register security register byte number 01 . . . 62 63 64 65 . . . 126 127 one-time user programmable factory programmed by atmel
33 3680e?dflash?12/08 AT25DF641 [preliminary] be programmed and will remain in the erased state (ffh). the programming of the data bytes is internally self-timed and should take place in a time of t otpp . it is not possible to suspend the programming of the otp security register. the three address bytes and at least one complete byte of data must be clocked into the device before the cs pin is deasserted, and the cs pin must be deasserted on even byte boundaries (multiples of eight bits); ot herwise, the device will abort the operation and the user-programma- ble portion of the otp security register will not be programmed. the wel bit in the status register will be reset back to the logical ?0? st ate if the otp security register program cycle aborts due to an incomplete address being sent, an incomplete byte of data being sent, the cs pin being deasserted on uneven byte boundaries , or because the user-programmable portion of the otp security register was previously programmed. while the device is programming the otp security register, the status register can be read and will indicate that the device is busy. for faster throughput, it is recommended that the status register be polled rather than waiting the t otpp time to determine if the data bytes have finished programming. at some point before the otp security register programming completes, the wel bit in the status register will be reset back to the logical ?0? state. if the device is powered-down during the otp secu rity register program cycle, then the con- tents of the 64-byte user programmable portion of the otp security register cannot be guaranteed and cannot be programmed again. the program otp security register command utiliz es the internal 256-buffer for processing. therefore, the contents of the buffer will be altered from its previous state when this command is issued. figure 10-4. program otp security register sck cs si so msb msb 23 1 0 10011011 67 5 49 839 37 38 33 36 35 34 31 32 29 30 opcode high-impedance aa aaa a msb ddddddd d address bits a23-a0 data in byte 1 msb ddddddd d data in byte n
34 3680e?dflash?12/08 AT25DF641 [preliminary] 10.5 read otp secu rity register the otp security register can be sequentially read in a similar fashion to the read array oper- ation up to the maximum clock frequency specified by f max . to read the otp security register, the cs pin must first be asserted and the opcode of 77h must be clocked into the device. after the opcode has been clocked in, the three address bytes must be clocked in to specify the start- ing address location of the first byte to read within the otp security register. following the three address bytes, two dummy bytes must be clocked into the device before data can be output. after the three address bytes and the dummy by tes have been clocked in, additional clock cycles will result in otp security register data being output on the so pi n. when the last byte (00007fh) of the otp security register has been read, the devi ce will continue reading back at the beginning of th e register (000000h). no delays will be incurre d when wrapping around from the end of the register to the beginning of the register. deasserting the cs pin will terminate the read operation and put the so pin into a high-imped- ance state. the cs pin can be deasserted at any time and does not require that a full byte of data be read. figure 10-5. read otp security register sck cs si so msb msb 23 1 0 01110111 67 5 41011 9 812 3336 35 34 31 32 29 30 opcode aaaa aaa a axx x msb msb ddddddd d d d address bits a23-a0 msb xxxxx x don't care data byte 1 high-impedance
35 3680e?dflash?12/08 AT25DF641 [preliminary] 11. status register commands 11.1 read status register the two-byte status register can be read to determine the device?s ready/busy status, as well as the status of many other functions such as hardware locking and software protection. the status register can be read at any time, incl uding during an internally self-timed program or erase operation. to read the status register, the cs pin must first be asserted and the opcode of 05h must be clocked into the device. after the opcode has b een clocked in, the devi ce will begin outputting status register data on the so pin during ever y subsequent clock cycle. after the second byte of the status register has been clocked out, the sequence will repeat itse lf starting again with the first byte of the status register as long as the cs pin remains asserted and the clock pin is being pulsed. the data in the status register is constantly being updated, so each repeating sequence will output new data. the rdy/bsy status is available for both bytes of the status register and is updated for each byte. at clock frequencies above f clk , the first two bytes of data outpu t from the status register will not be valid. therefore, if operating at clock frequencies above f clk , at least four bytes of data must be clocked out from the device in order to read the correct values of both bytes of the sta- tus register. deasserting the cs pin will terminate the read status register operation and put the so pin into a high-impedance state. the cs pin can be deasserted at any time and does not require that a full byte of data be read.
36 3680e?dflash?12/08 AT25DF641 [preliminary] notes: 1. only bit 7 of status register byte 1 will be modified when using the write status register byte 1 command. 2. r/w = readable and writeable r = readable only table 11-1. status register format ? byte 1 bit (1) name type (2) description 7 sprl sector protection registers locked r/w 0 sector protection registers are unlocked (default). 1 sector protection registers are locked. 6 res reserved for future use r 0 reserved for future use. 5 epe erase/program error r 0 erase or program operation was successful. 1 erase or program error detected. 4 wpp write protect (wp ) pin status r 0wp is asserted. 1wp is deasserted. 3:2 swp software protection status r 00 all sectors are software unprotected (all sector protection registers are 0). 01 some sectors are software protected. read individual sector protection registers to determine which sectors are protected. 10 reserved for future use. 11 all sectors are software protected (all sector protection registers are 1 ? default). 1 wel write enable latch status r 0 device is not write enabled (default). 1 device is write enabled. 0 rdy/bsy ready/busy status r 0 device is ready. 1 device is busy with an internal operation.
37 3680e?dflash?12/08 AT25DF641 [preliminary] notes: 1. only bits 4 and 3 of status register byte 2 will be mo dified when using the write status register byte 2 command. 2. r/w = readable and writeable r = readable only 11.1.1 sprl bit the sprl bit is used to control whether the sector protection registers can be modified or not. when the sprl bit is in the logical ?1? state, all sector protection registers are locked and can- not be modified with the protect sector and un protect sector commands (the device will ignore these commands). in addition, the global protec t and global unprotect features cannot be per- formed. any sectors that are presently pr otected will remain protected, and any sectors that are presently unprot ected will remain unprotected. when the sprl bit is in the logical ?0? state, all sector protection registers are unlocked and can be modified (the protect sector and unprotec t sector commands, as well as the global pro- tect and global unprotect features, will be processed as normal). the sprl bit defaults to the logical ?0? state after device power-up. the reset command has no effect on the sprl bit. the sprl bit can be modified freely whenever the wp pin is deasserted. however, if the wp pin is asserted, then the sprl bit may only be changed from a logical ?0? (sector protection regis- ters are unlocked) to a logical ?1? (sector protection registers are locked). in order to reset the sprl bit back to a logical ?0? using the write status register byte 1 command, the wp pin will have to first be deasserted. the sprl bit is the only bit of status register byte 1 that can be user modified via the write sta- tus register byte 1 command. 11.1.2 epe bit the epe bit indicates whether the last erase or program operation completed successfully or not. if at least one byte during the erase or program operation did not erase or program properly, then the epe bit will be set to the logical ?1? state. the epe bit will not be set if an erase or pro- table 11-2. status register format ? byte 2 bit (1) name type (2) description 7 res reserved for future use r 0 reserved for future use. 6 res reserved for future use r 0 reserved for future use. 5 res reserved for future use r 0 reserved for future use. 4 rste reset enabled r/w 0 reset command is disabled (default). 1 reset command is enabled. 3 sle sector lockdown enabled r/w 0 sector lockdown and freeze sector lockdown state commands are disabled (default). 1 sector lockdown and freeze sector lockdown state commands are enabled. 2 ps program suspend status r 0 no sectors are program suspended (default). 1 a sector is program suspended. 1 es erase suspend status r 0 no sectors are erase suspended (default). 1 a sector is erase suspended. 0 rdy/bsy ready/busy status r 0 device is ready. 1 device is busy with an internal operation.
38 3680e?dflash?12/08 AT25DF641 [preliminary] gram operation aborts for any reason such as an attempt to erase or program a protected region or a locked down sector, an attempt to erase or program a suspended sector, or if the wel bit is not set prior to an er ase or program operation . the epe bit will be updated after every erase and program operation. 11.1.3 wpp bit the wpp bit can be read to determine if the wp pin has been asserted or not. 11.1.4 swp bits the swp bits provide feedback on the software protection status for the device. there are three possible combinations of the swp bits that indicate whether none, some, or all of the sectors have been protected using the protect sector command or the global protect feature. if the swp bits indicate that some of the sectors have been protected, then the individual sector pro- tection registers can be read with the read sector protection registers command to determine which sectors are in fact protected. 11.1.5 wel bit the wel bit indicates the current status of the internal write enable latch. when the wel bit is in the logical ?0? state, the dev ice will not accept any byte/page program, erase, protect sector, unprotect sector, sector lockdown, freeze sector lockdown state, program otp security register, or write status register commands. the wel bit defaults to the logical ?0? state after a device power-up or reset operat ion. in addition, the wel bit will be reset to the logical ?0? state automatically under th e following conditions: ? write disable operation completes successfully ? write status register operation completes successfully or aborts ? protect sector operation completes successfully or aborts ? unprotect sector operation completes successfully or aborts ? sector lockdown operation completes successfully or aborts ? freeze sector lockdown state operation completes successfully or aborts ? program otp security register operation completes successfully or aborts ? byte/page program operation completes successfully or aborts ? block erase operation completes successfully or aborts ? chip erase operation completes successfully or aborts ? hold condition aborts if the wel bit is in the logical ?1? state, it will not be reset to a logical ?0? if an operation aborts due to an incomplete or unrecognized opcode being clocked into the device before the cs pin is deasserted. in order for the wel bit to be reset when an operation aborts prematurely, the entire opcode for a byte/page program, erase, protect sector, unprotect sector, sector lockdown, freeze sector lockdown state, program otp security register, or write status register com- mand must have been clocked into the device. 11.1.6 rste bit the rste bit is used to enable or disable the reset command. when the rs te bit is in the log- ical ?0? state (the default state after power-up), the reset command is disabled and any attempts to reset the device using the re set command will be ignore d. when the rste bit is in the logical ?1? state, the reset command is enabled.
39 3680e?dflash?12/08 AT25DF641 [preliminary] the rste bit will retain its state as long as power is applied to the device. once set to the logi- cal ?1? state, the rste bit will remain in that state until it is modified using the write status register byte 2 command or until the device has been power cycled. the reset command itself will not change the state of the rste bit. 11.1.7 sle bit the sle bit is used to enable and disable the sector lockdown and freeze sector lockdown state commands. when the sle bit is in the logical ?0? state (the default state after power-up), the sector lockdown and freeze sector lockdown commands are disabled. if the sector lock- down and freeze sector lockdown commands are disabled, then any attempts to issue the commands will be ignored. th is provides a safegua rd for these co mmands against accidental or erroneous execution. when the sle bit is in the logical ?1? state, the sector lockdown and freeze sector lockdown state commands are enabled. unlike the wel bit, the sle bit does not automatically reset after certain device operations. therefore, once set, the sle bit will remain in the logica l ?1? state until it is modified using the write status register byte 2 command or until the device has been power cycled. the reset command has no effect on the sle bit. if the freeze sector lockdown state command has been issued, then the sle bit will be perma- nently reset in the logical ?0? state to indicate that the sector lockdown command has been disabled. 11.1.8 ps bit the ps bit indicates whether or not a sector is in the program suspend state. 11.1.9 es bit the es bit indicates whether or not a sector is in the erase suspend state. 11.1.10 rdy/bsy bit the rdy/bsy bit is used to determi ne whether or not an internal operation, such as a program or erase, is in progress. to po ll the rdy/bsy bit to detect the co mpletion of a pr ogram or erase cycle, new status register data must be contin ually clocked out of the device until the state of the rdy/bsy bit changes from a logical ?1? to a logical ?0?. figure 11-1. read status register sck cs si so msb 23 1 0 00000101 67 5 41011 9 812 2122 17 20 19 18 15 16 13 14 23 24 28 29 27 26 25 30 opcode msb msb dddddd d d d d msb ddddd d d d dd d d d d status register byte 1 status register byte 1 status register byte 2 high-impedance
40 3680e?dflash?12/08 AT25DF641 [preliminary] 11.2 write status register byte 1 the write status register byte 1 command is us ed to modify the sprl bit of the status regis- ter and/or to perform a global protect or global unprotect operation. before the write status register byte 1 command can be issued, the write enable command must have been previ- ously issued to set the wel bit in the status register to a logical ?1?. to issue the write status register byte 1 command, the cs pin must first be asserted and the opcode of 01h must be clocked into the device followed by one byte of data. the one byte of data consists of the sprl bit value, a don?t care bit, four data bits to denote whether a global protect or unprotect should be performed, and two additional don?t care bits (see table 11-3 ). any additional data bytes that are sent to the device will be ignored. when the cs pin is deas- serted, the sprl bit in the status register will be modified, and the wel bit in the status register will be reset back to a logical ?0?. the va lues of bits 5, 4, 3, and 2 and the state of the sprl bit before the write status register byte 1 command was executed (the prior state of the sprl bit) will determine whether or not a global protect or global unprotect will be performed. please refer to ?global protect/unprotect? on page 24 for more details. the complete one byte of data must be clocked into the device before the cs pin is deasserted, and the cs pin must be deasserted on even byte boundaries (multiples of eight bits); otherwise, the device will abort the operatio n, the state of the sprl bit will not change, no potential global protect or unprotect will be perfo rmed, and the wel bit in the st atus register will be reset back to the logical ?0? state. if the wp pin is asserted, then the sprl bit can only be set to a logical ?1?. if an attempt is made to reset the sprl bit to a logical ?0? while the wp pin is asserted, then the write status register byte 1 command will be igno red, and the wel bit in the status register will be re set back to the logical ?0? state. in order to reset the sprl bit to a logical ?0?, the wp pin must be deasserted. figure 11-2. write status register byte 1 table 11-3. write status register byte 1 format bit 7bit 6bit 5bit 4bit 3bit 2bit 1bit 0 sprl x global protect/unprotect x x sck cs si so msb 23 1 0 0000000 67 5 4 opcode 10 11 9 81415 13 12 1 msb dxdddd x x status register in byte 1 high-impedance
41 3680e?dflash?12/08 AT25DF641 [preliminary] 11.3 write status register byte 2 the write status register byte 2 command is used to modify the rste and sle bits of the sta- tus register. using the write status register byte 2 command is the only way to modify the rste and sle bits in the status register dur ing normal device operation, and the sle bit can only be modified if the sector lockdown state has not been frozen. before the write status reg- ister byte 2 command can be issued, the wr ite enable command must have been previously issued to set the wel bit in the status register to a logical ?1?. to issue the write status register byte 2 command, the cs pin must first be asserted and the opcode of 31h must be clocked into the device followed by one byte of data. the one byte of data consists of three don?t care bits, the rste bit value, the sle bit value, and three additional don?t care bits (see table 11-4 ). any additional data bytes that are sent to the device will be ignored. when the cs pin is deasserted, the rste and sle bits in the status register will be modified, and the wel bit in the status register will be reset back to a logical ?0?. the sle bit will only be modified if the fr eeze sector lockdo wn state command has not been previously issued. the complete one byte of data must be clocked into the device before the cs pin is deasserted, and the cs pin must be deasserted on even byte boundaries (multiples of eight bits); otherwise, the device will abort the o peration, the state of the rste and sle bits will not change, and the wel bit in the status register will be reset back to the logical ?0? state. figure 11-3. write status register byte 2 table 11-4. write status register byte 2 format bit 7bit 6bit 5bit 4bit 3bit 2bit 1bit 0 xxxrsteslexxx sck cs si so msb 23 1 0 0011000 67 5 4 opcode 10 11 9 81415 13 12 1 msb xxxddx x x status register in byte 2 high-impedance
42 3680e?dflash?12/08 AT25DF641 [preliminary] 12. other commands and functions 12.1 reset in some applications, it may be necessary to prematurely terminate a program or erase cycle early rather than wait the hundreds of micros econds or milliseconds nec essary for the program or erase operation to complete normally. the reset command allows a program or erase opera- tion in progress to be ended abruptly and returns the device to an idle state. since the need to reset the device is immediate, the write enable command does not need to be issued prior to the reset command being issued. therefore, the reset command operates independently of the state of the wel bit in the status register. the reset command can only be executed if the command has been enabled by setting the reset enabled (rste) bit in the status register to a logical ?1?. if the reset command has not been enabled (the rste bit is in the logical ?0 ? state), then any attempts at executing the reset command will be ignored. to perform a reset, the cs pin must first be asserted and the opcode of f0h must be clocked into the device. no address bytes need to be clocked in, but a confirmation byte of d0h must be clocked into the device immediately after the opcod e. any additional data clocked into the device after the confirmation byte will be ignored. when the cs pin is deasserted, the program or erase operation currently in progress will be terminated within a time of t rst . since the program or erase operation may not complete before the device is reset, the contents of the page being pro- grammed or the block being erased cannot be guaranteed to be valid. the reset command has no effect on the states of the sector protection registers, the sector lockdown registers, or the sprl, rste, and sle bits in the status register. the wel, ps, and es bits, however, will be rese t back to their default states. if a reset operation is performed while a sector is erase suspended, the suspend operation will abort, and the contents of the block being erased in the suspended sector will be left in an undefined state. if a reset is per- formed while a sector is progr am suspended, the su spend operation will abo rt, and the contents of the page that was being programmed and su bsequently suspended will be undefined. the remaining pages in the 64- kbyte sector will retain their previous contents. the complete opcode and confirmation byte must be clocked into the device before the cs pin is deasserted, and the cs pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, no reset operation will be performed. figure 12-1. reset sck cs si so msb 23 1 0 1111000 67 5 4 opcode confirmation byte in 10 11 9 81415 13 12 0 msb 110100 0 0 high-impedance
43 3680e?dflash?12/08 AT25DF641 [preliminary] 12.2 read manufacturer and device id identification information can be read from the dev ice to enable systems to electronically query and identify the device while it is in system. the identification method and the command opcode comply with the jedec standard for ?manufacturer and device id read methodology for spi compatible serial interface memory devices?. the type of information that can be read from the device includes the jedec defined manufacturer id, the vendor specific device id, and the ven- dor specific extended device information. the read manufacturer and device id command is limited to a maximum clock frequency of f clk . since not all flash devices ar e capable of operating at very high clock frequencies, applica- tions should be designed to read the identificat ion information from the devices at a reasonably low clock frequency to ensure that all devices to be used in the application can be identified properly. once the identification process is complete, the application can then increase the clock frequency to accommodate specific flash devices that are capable of operating at the higher clock frequencies. to read the identification information, the cs pin must first be asserted and the opcode of 9fh must be clocked into the device. after the opc ode has been clocked in, the device will begin out- putting the identification data on the so pin during the subsequent cloc k cycles. the first byte that will be output will be the manufacturer id followed by two bytes of device id information. the fourth byte output will be the extended device in formation stri ng length, which will be 00h indicating that no extended device information follows. after the extended device information string length byte is output, the so pin will go into a high-i mpedance state; ther efore, additional clock cycles will have no affect on the so pi n and no data will be output. as indicated in the jedec standard, reading the extended device information string length and any subsequent data is optional. deasserting the cs pin will terminate the manufacturer and device id read operation and put the so pin into a high-impedance state. the cs pin can be deasserted at any time and does not require that a full byte of data be read. table 12-1. manufacturer and device id information byte no. data type value 1 manufacturer id 1fh 2 device id (part 1) 48h 3 device id (part 2) 00h 4 extended device information string length 00h table 12-2. manufacturer and device id details data type bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 hex value details manufacturer id jedec assigned code 1fh jedec code: 0001 1111 (1fh for atmel) 00011111 device id (part 1) family code density code 48h family code: 010 (at25df/26dfxxx series) density code: 01000 (64-mbit) 01001000 device id (part 2) sub code product version code 00h sub code: 000 (standard series) product version: 00000 (initial version) 00000000
44 3680e?dflash?12/08 AT25DF641 [preliminary] figure 12-2. read manufacturer and device id 12.3 deep power-down during normal operation, the device will be placed in the standby mode to consume less power as long as the cs pin remains deasserted and no internal operation is in progress. the deep power-down command offers the ability to place the device into an even lower power consump- tion state called the deep power-down mode. when the device is in the deep power-down mode, all commands including the read status register command will be ignored with the e xception of the resume from deep power-down command. since all commands will be ignored, the mode can be used as an extra protection mechanism against program and erase operations. entering the deep power-down mode is accomplished by simply asserting the cs pin, clocking in the opcode of b9h, and then deasserting the cs pin. any additional data clocked into the device after the opcode will be igno red. when the cs pin is deasserted, the device will enter the deep power-down mode within the maximum time of t edpd . the complete opcode must be clocked in before the cs pin is deasserted, and the cs pin must be deasserted on an even byte bound ary (multiples of eight bits); otherwise, the device will abort the operation and return to the standby mode once the cs pin is deasserted. in addition, the device will default to the stand by mode after a power-cycle. the deep power-down command will be ignored if an internally self-timed operation such as a program or erase cycle is in progress. the deep power-down command must be reissued after the internally self-timed operation has been completed in order for the device to enter the deep power-down mode. sck cs si so 6 0 9fh 8 7 38 opcode 1fh 48h 00h 00h manufacturer id device id byte 1 device id byte 2 extended device information string length high-impedance 14 16 15 22 24 23 30 32 31 note: each transition shown for si and so represents one byte (8 bits)
45 3680e?dflash?12/08 AT25DF641 [preliminary] figure 12-3. deep power-down 12.4 resume from deep power-down in order to exit the deep power-down mode and resume normal device operation, the resume from deep power-down command must be issu ed. the resume from deep power-down com- mand is the only command that the device will recognized while in the deep po wer-down mode. to resume from the deep power-down mode, the cs pin must first be asserted and opcode of abh must be clocked into the device. any addi tional data clocked into the device after the opcode will be ignored. when the cs pin is deasserted, the device will exit the deep power- down mode within the maximum time of t rdpd and return to the standby mode. after the device has returned to the standby mode, normal command operations such as read array can be resumed. if the complete opcode is not clocked in before the cs pin is deasserted, or if the cs pin is not deasserted on an even byte bo undary (multiples of eight bits), then the device will abort the operation and return to the deep power-down mode. figure 12-4. resume from deep power-down sck cs si so msb i cc 23 1 0 10111001 67 5 4 opcode high-impedance standby mode current active current deep power-down mode current t edpd sck cs si so msb i cc 23 1 0 10101011 67 5 4 opcode high-impedance deep power-down mode current active current standby mode current t rdpd
46 3680e?dflash?12/08 AT25DF641 [preliminary] 12.5 hold the hold pin is used to pause the serial communic ation with the device without having to stop or reset the clock sequence. the hold mode, however, does not have an affect on any internally self-timed operations such as a program or erase cycle. therefore, if an erase cycle is in prog- ress, asserting the hold pin will not pause the operation, and the erase cycle will continue until it is finished. the hold mode can only be entered while the cs pin is asserted. the hold mode is activated simply by asserting the hold pin during the sck low pulse. if the hold pin is asserted during the sck high pulse, then the hold mode won?t be started until the beginning of the next sck low pulse. the device will remain in the hold mode as long as the hold pin and cs pin are asserted. while in the hold mode, the so pi n will be in a high-impedance state. in addition, both the si pin and the sck pin will be ignored. the wp pin, however, can still be asserted or deasserted while in the hold mode. to end the hold mode and resume serial communication, the hold pin must be deasserted during the sck low pulse. if the hold pin is deasserted during the sck high pulse, then the hold mode won?t end until the beginning of the next sck low pulse. if the cs pin is deasserted while the hold pin is still asserted, then any operation that may have been star ted will be aborted, and t he device will reset the wel bi t in the status register back to the logical ?0? state. figure 12-5. hold mode sck cs hold hold hold hold
47 3680e?dflash?12/08 AT25DF641 [preliminary] 13. rapids implementation to implement rapids and operate at clock frequencies higher than what can be achieved in a viable spi implementation, a full clock cycle can be used to transmit data back and forth across the serial bus. the at25df 641 is designed to always clock its data out on the falling edge of the sck signal and clock data in on the rising edge of sck. for full clock cycle operation to be achieved, when the AT25DF641 is cl ocking data out on the falling edge of sck, the host controller should wa it until the next falling edge of sck to latch the data in. similarly, the host controller should clock its data out on the rising edge of sck in order to give the AT25DF641 a full clock cycle to latch the incoming data in on the next rising edge of sck. implementing rapids allows a system to run at higher clock frequencies since a full clock cycle is used to accommodate a device?s clock-to -output time, input setup time, and associated rise/fall times. for example, if the system cl ock frequency is 100 mhz (10 ns cycle time) with a 50% duty cycle, and the host controller has an input setup time of 2 ns, then a standard spi implementation would require that the slave device be capable of outputting its data in less than 3 ns to meet the 2 ns host controller setup time [(10 ns x 50%) - 2 ns] not accounting for rise/fall times. in an spi mode 0 or 3 implementation, the spi master is designed to clock in data on the next immediate rising edge of sck after the spi slave has clocked its data out on the preceding falling edge. this essentially makes spi a half-clock cycle protocol and requires extremely fast clock-to-output times and input setup times in order to run at high clock frequencies. with a rapids implementation of this example, however, the full 10 ns cycle time is available which gives the slave device up to 8 ns, not accounting for rise/fall times, to clock its data out. like- wise, with rapids, the host controller has more time available to output its data to the slave since the slave device would be clocking that data in a full clock cycle later. figure 13-1. rapids operation sck mosi miso t v 1 234567 81 234567 8 mosi = master out, slave in miso = master in, slave out the master is the asic/mcu and the slave is the memory device. the master always clocks data out on the rising edge of sck and always clocks data in on the falling edge of sck. the slave always clocks data out on the falling edge of sck and always clocks data in on the rising edge of sck. a. master clocks out first bit of byte a on the rising edge of sck. b. slave clocks in first bit of byte a on the next rising edge of sck. c. master clocks out second bit of byte a on the same rising edge of sck. d. last bit of byte a is clocked out from the master. e. last bit of byte a is clocked into the slave. f. slave clocks out first bit of byte b. g. master clocks in first bit of byte b. h. slave clocks out second bit of byte b. i. master clocks in last bit of byte b. a b c d e f g 1 h byte a msb lsb byte b msb lsb slave cs i
48 3680e?dflash?12/08 AT25DF641 [preliminary] 14. electrical specifications 14.1 absolute maximum ratings* temperature under bias .... ........... ............ .... -55 c to +125 c *notice: stresses beyond those listed under ?absolute maximum ratings? may cause permanent dam- age to the device. this is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. storage temperature .................................... -65 c to +150 c all input voltages (including nc pins) with respect to ground .....................................-0.6v to +4.1v all output voltages with respect to ground .............................-0.6v to v cc + 0.5v 14.2 dc and ac operating range AT25DF641 operating temperature (case) ind. -40 c to 85 c v cc power supply 2.7v to 3.6v 14.3 dc characteristics symbol parameter condition min typ max units i sb standby current cs , wp , hold = v cc , all inputs at cmos levels 25 50 a i dpd deep power-down current cs , wp , hold = v cc , all inputs at cmos levels 510a i cc1 active current, read operation f = 100 mhz; i out = 0 ma; cs = v il , v cc = max 12 19 ma f = 85 mhz; i out = 0 ma; cs = v il , v cc = max 10 17 f = 66 mhz; i out = 0 ma; cs = v il , v cc = max 814 f = 50 mhz; i out = 0 ma; cs = v il , v cc = max 712 f = 33 mhz; i out = 0 ma; cs = v il , v cc = max 610 f = 20 mhz; i out = 0 ma; cs = v il , v cc = max 58 i cc2 active current, program operation cs = v cc , v cc = max 12 18 ma i cc3 active current, erase operation cs = v cc , v cc = max 12 18 ma i li input leakage current v in = cmos levels 1 a i lo output leakage current v out = cmos levels 1 a v il input low voltage 0.3 x v cc v v ih input high voltage 0.7 x v cc v v ol output low voltage i ol = 1.6 ma; v cc = min 0.4 v v oh output high voltage i oh = -100 a; v cc = min v cc - 0.2v v
49 3680e?dflash?12/08 AT25DF641 [preliminary] 14.4 ac characteristics - maximum clock frequencies symbol parameter min max units rapids and spi operation f max maximum clock frequency for all operations ? rapids operation only (excluding 0bh, 03h, 3bh, and 9f opcodes) 100 mhz f clk maximum clock frequency for all operations (excluding 03h and 3bh opcodes) 85 mhz f rdlf maximum clock frequency for 03h opcode (read array ? low frequency) 50 mhz f rddo maximum clock frequency for 3bh opcode (dual-output read) 85 mhz 14.5 ac characteristics ? all other parameters symbol parameter min max units t clkh clock high time 4.3 ns t clkl clock low time 4.3 ns t clkr (1) clock rise time, peak-to-peak (slew rate) 0.1 v/ns t clkf (1) clock fall time, peak-to-peak (slew rate) 0.1 v/ns t csh chip select high time 50 ns t csls chip select low setup time (relative to clock) 5 ns t cslh chip select low hold time (relative to clock) 5 ns t cshs chip select high setup time (relative to clock) 5 ns t cshh chip select high hold time (relative to clock) 5 ns t ds data in setup time 2ns t dh data in hold time 1ns t dis (1) output disable time 5ns t v (2) output valid time 5ns t oh output hold time 2ns t hls hold low setup time (relative to clock) 5 ns t hlh hold low hold time (relative to clock) 5 ns t hhs hold high setup time (relative to clock) 5 ns t hhh hold high hold time (relative to clock) 5 ns t hlqz (1) hold low to output high-z 5ns t hhqx (1) hold high to output low-z 5ns t wps (1)(3) write protect setup time 20 ns t wph (1)(3) write protect hold time 100 ns t secp (1) sector protect time (from chip select high) 20 ns t secup (1) sector unprotect time (from chip select high) 20 ns t lock (1) sector lockdown and freeze sector lockdown state time (from chip select high) 200 s
50 3680e?dflash?12/08 AT25DF641 [preliminary] notes: 1. not 100% tested (value guaranteed by design and characterization). 2. 15 pf load at frequencies above 70 mhz, 30 pf otherwise. 3. only applicable as a constraint for the write status register byte 1 command when sprl = 1. note: 1. maximum values indicate worst-case performance after 100,000 erase/program cycles. 2. not 100% tested (value guaranteed by design and characterization). t edpd (1) chip select high to deep power-down 1 s t rdpd (1) chip select high to standby mode 30 s t rst reset time 30 s 14.6 program and erase characteristics symbol parameter min typ max units t pp (1) page program time (256 bytes) 1.0 3.0 ms t bp byte program time 7s t blke (1) block erase time 4 kbytes 50 200 ms 32 kbytes 250 600 64 kbytes 400 950 t chpe (1)(2) chip erase time 64 112 sec t susp program/erase suspend time 10 20 s t res program/erase resume time 10 20 s t otpp (1) otp security register program time 200 500 s t wrsr (2) write status register time 200 ns 14.7 power-up conditions symbol parameter min max units t vcsl minimum v cc to chip select low time 50 s t puw power-up device delay before program or erase allowed 10 ms v por power-on reset voltage 1.5 2.5 v 14.5 ac characteristics ? all ot her parameters (continued) symbol parameter min max units
51 3680e?dflash?12/08 AT25DF641 [preliminary] 14.8 input test waveforms and measurement levels 14.9 output test load ac driving levels ac measurement level 0.1v cc v cc /2 0.9v cc t r , t f < 2 ns (10% to 90%) device under test 15 pf (frequencies above 70 mhz) or 30pf
52 3680e?dflash?12/08 AT25DF641 [preliminary] 15. ac waveforms figure 15-1. serial input timing figure 15-2. serial output timing figure 15-3. wp timing for write status register byte 1 command when sprl = 1 cs si sck so msb high-impedance msb lsb t csls t clkh t clkl t cshs t cshh t ds t dh t cslh t csh cs si sck so t v t clkh t clkl t dis t v t oh wp si sck so 00 0 high-impedance msb x t wps t wph cs lsb of write status register data byte msb of write status register byte 1 opcode msb of next opcode
53 3680e?dflash?12/08 AT25DF641 [preliminary] figure 15-4. hold timing ? serial input figure 15-5. hold timing ? serial output cs si sck so t hhh t hls t hlh t hhs hold high-impedance cs si sck so t hhh t hls t hlqz t hlh t hhs hold t hhqx
54 3680e?dflash?12/08 AT25DF641 [preliminary] 16. ordering information 16.1 ordering code detail note: the shipping carrier option code is not marked on the devices. 16.2 green package options (pb/halide-fr ee/rohs compliant) ordering code package lead finish operating voltage max. freq. (mhz) operation range AT25DF641-s3h-b AT25DF641-s3h-t 16s nipdau 2.7v to 3.6v 100 industrial (-40c to +85c) AT25DF641-mwh-y AT25DF641-mwh-t 8mw1 package type 16s 16-lead, 0.300" wide, plastic gull wing small outline package (soic) 8mw1 8-contact, 6 x 8 mm, very thin dual flat no lead package (vdfn) at2 5d 6 4 s3h b 1 ?? f atmel designator product family device density 64 = 64-megabit interface 1 = serial package option s3 = 16-lead, 0.300" wide soic mw = 8-contact, 6 mm x 8 mm vdfn device grade h = green, nipdau lead finish, industrial temperature range (?40c to +85c) shipping carrier option b = bulk (tubes) y = bulk (trays) t = tape and reel
55 3680e?dflash?12/08 AT25DF641 [preliminary] 17. packaging information 17.1 16s ? soic 2 3 25 orch a rd p a rkw a y sa n jo s e, ca 951 3 1 title drawing no. r rev. 16 s , 16-le a d, 0. 3 00" wide body, pl as tic g u ll wing s m a ll o u tline p a ck a ge ( s oic) 11/02/05 16 s a a1 e l s ide view top view end view h e b n 1 e a d c common dimen s ion s (unit of me asu re = mm) s ymbol min nom max note note s : 1. thi s dr a wing i s for gener a l inform a tion only; refer to jedec dr a wing m s -01 3 , v a ri a tion aa for a ddition a l inform a tion. 2. dimen s ion d doe s not incl u de mold fl as h, protr us ion s or g a te bu rr s . mold fl as h, protr us ion a nd g a te bu rr s s h a ll not exceed 0.15 mm (0.006") per s ide. 3 . dimen s ion e doe s not incl u de inter-le a d fl as h or protr us ion. inter-le a d fl as h a nd protr us ion s s h a ll not exceed 0.25 mm (0.010") per s ide. 4. l i s the length of the termin a l for s oldering to a subs tr a te. a 2. 3 5 ? 2.65 a1 0.10 ? 0. 3 0 b 0. 3 1 ? 0.51 d 10. 3 0 b s c 2 e 7.50 b s c 3 h 10. 3 0 b s c l 0.40 ? 1.27 4 e 1.27 b s c c 0.20 0. 33
56 3680e?dflash?12/08 AT25DF641 [preliminary] 17.2 8mw1 ? vdfn title drawing no. gpc rev. packa g e drawin g contact: p a ck a gedr a wing s @ a tmel.com 8 mw1 ykl d 8 mw1, 8 -p a d (6 x 8 x 1.0 mm body), therm a lly enh a nced pl as tic very thin d ua l fl a t no le a d p a ck a ge (vdfn) 4/15/0 8 common dimen s ion s (unit of me asu re = mm) s ymbol min nom max note a 0. 8 0 ? 1.00 a1 ? ? 0.05 b 0. 3 5 0.40 0.4 8 c 0.20 3 ref d 5.90 6.00 6.10 d1 4.70 4. 8 0 4.90 e 7.90 8 .00 8 .10 e1 4. 8 0 4.90 5.00 e 1.27 l 0.45 0.50 0.55 k 0. 3 0 ref pin 1 id top view pin #1 id bottom view e1 d1 l b e d e a1 a s ide view k 1 pin #1 ch a mfer (c 0. 3 0) option a pin #1 notch (0.20 r) option b 2 3 4 8 7 6 5 c
57 3680e?dflash?12/08 AT25DF641 [preliminary] 18. errata 18.1 erase suspend issue: parts may not program correctly if a device is in the erase suspend state. workaround: none. it is recommended to not use the byte/page program commands (opcodes 02h and a2h) during an erase suspend state. systems should resume from erase suspend first before attempting to program a device. resolution: the erase suspend feature is being fixed with a new revision of the device. please contact atmel for the estimated ava ilability of devices with the fix. 18.2 ac characteristics ? maximum clock frequencies for read operations issue: devices currently do not meet the maximum specified clock frequency for the following read operations: read array, read sector protection registers, read sector lockdown regis- ters, read otp security register, read stat us register, and read manufacturer and device id. reading at clock frequencies higher than those listed below could cause read errors. workaround: none. devices are limited to the clock frequencies specified above. resolution: the clock frequency issues are being fix ed with a new revision of the device. please contact atmel for the estimat ed availability of devices with the fix. symbol opcodes affected datasheet sp ecification errata specification f max 1bh, 3ch, 35h, 77h, 05h 100 mhz 66 mhz f clk 0bh, 9fh 85 mhz 66 mhz f rdlf 03h 50 mhz 33 mhz f rddo 3bh 85 mhz 66 mhz
58 3680e?dflash?12/08 AT25DF641 [preliminary] 19. revision history revision level ? release date history a ? december 2007 initial release. b ? february 2008 minor text edits throughout document changed standby current values ? increased typical value from 10 a to 25 a ? increased maximum value from 20 a to 35 a changed minimum clock high time and minimum clock low time from 3.7 ns to 4.3 ns c ? june 2008 replaced the technical illustration (16s2) with the correct one (16s) on page 55 . d ? november 2008 added errata (section 18) regarding erase suspend and ac characteristics. corrected clock frequency values in table 6-1. e ? december 2008 changed standby current value ? increased maximum value from 35 a to 50 a changed deep power-down current values ? increased typical value from 1 a to 5 a ? increased maximum value from 5 a to 10 a
3680e?dflash?12/08 headquarters international atmel corporation 2325 orchard parkway san jose, ca 95131 usa tel: 1(408) 441-0311 fax: 1(408) 487-2600 atmel asia unit 1-5 & 16, 19/f bea tower, millennium city 5 418 kwun tong road kwun tong, kowloon hong kong tel: (852) 2245-6100 fax: (852) 2722-1369 atmel europe le krebs 8, rue jean-pierre timbaud bp 309 78054 saint-quentin-en- yvelines cedex france tel: (33) 1-30-60-70-00 fax: (33) 1-30-60-71-11 atmel japan 9f, tonetsu shinkawa bldg. 1-24-8 shinkawa chuo-ku, tokyo 104-0033 japan tel: (81) 3-3523-3551 fax: (81) 3-3523-7581 product contact web site www.atmel.com technical support dataflash@atmel.com sales contact www.atmel.com/contacts literature requests www.atmel.com/literature disclaimer: the information in this document is provided in connection with atmel products. no license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the sale of atmel products. except as set forth in atmel?s terms and condi- tions of sale located on atmel?s web site, atmel assumes no li ability whatsoever and disclaims any express, implied or statutor y warranty relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particu lar purpose, or non-infringement. in no event shall atmel be liable for any direct, indirect, consequential, punitive, special or i nciden- tal damages (including, without limitation, damages for loss of profits, business interruption, or loss of information) arising out of the use or inability to use this document, even if atme l has been advised of the possibility of such damages. atmel makes no representations or warranties with respect to the accuracy or comp leteness of the contents of this document and reserves the rig ht to make changes to specifications and product descriptions at any time without notice. atmel does not make any commitment to update the information contained her ein. unless specifically provided otherwise, atmel products are not suitable for, and shall not be used in, automotive applications. atmel?s products are not int ended, authorized, or warranted for use as components in applications in tended to support or sustain life. ? 2008 atmel corporation. all rights reserved. atmel ? , logo and combinations thereof, dataflash ? , rapids ? , and others are registered trade- marks or trademarks of atmel corporation or its subsidiari es. other terms and product names may be trademarks of others.

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